The present invention provides a compound which is capable of curing to form an organic film even in an inert gas not only in air atmosphere without forming byproducts, and also forming an organic under layer film that has good dry etching durability in substrate processing, excels in heat resistance and possesses superior gap filling/planarizing characteristics of a pattern formed on a substrate.The compound is shown by the following general formula (1-1), wherein AR1 and AR2 each independently represent an aromatic ring or an aromatic ring that contains at least one nitrogen atom and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded with each other; AR3 represents a benzene ring, a naphthalene ring, a thiophene ring, a pyridine ring, or a diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; p is 1 or 2; q is 1 or 2; r is 0 or 1; s is 2 to 4; when s = 2, Z represents a single bond, a divalentatom, or a divalent organic group; and when s = 3 or 4, Z represents a trivalent or quadrivalent atom or organic group.