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CN110620137A 具有电绝缘扩散中断区的鳍式场效应晶体管及其形成方法 审中-公开

具有电绝缘扩散中断区的鳍式场效应晶体管及其形成方法
摘要：
一种鳍式场效应晶体管包括在衬底上沿第一方向延伸的第一鳍和沿第一方向延伸并在第一方向上与第一鳍间隔开的第二鳍。第三鳍提供有比第一鳍和第二鳍的长边短的长边并设置在第一鳍与第二鳍之间。第一栅极结构沿与第一方向不同的第二方向延伸并横跨第一鳍。器件隔离层设置在第一鳍、第二鳍和第三鳍的每个的下侧壁上并形成为沿第一方向延伸。电绝缘的扩散中断区包括横跨在第一鳍与第三鳍之间的第一部分、横跨在第二鳍与第三鳍之间的第二部分和在第三鳍上设置于第一部分与第二部分之间的第三部分。扩散中断区在器件隔离层上沿第二方向延伸。第三部分的下表面的水平高于第一部分和第二部分的每个的下端的水平且低于第一栅极结构的上表面的水平。
摘要（英）：

A FINFET includes a first fin extending in a first direction on a substrate and, a second fin extending in the first direction and spaced apart from the first fin in the first direction. A third fin is provided with a long side shorter than long sides of the first fin and the second fin and is disposed between the first fin and the second fin. A first gate structure extends in a second direction different from the first direction and crosses the first fin. A device isolation layer is disposed on a lower sidewall of each of the first, second and third fins and is formed to extend in the first direction. An electrically insulating diffusion break region includes a first portion crossing between the first fin and the third fin, a second portion crossing between the second fin and the third fin, and a third portion disposed between the first portion and the second portion on the third fin. The diffusion break region extends in the second direction on the device isolation layer. A level ofa lower surface of the third portion is higher than a level of a lower end of each of the first portion and the second portion and is lower than a level of an upper surface of the first gate structure.

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