The invention discloses a method for preparing a graphene film and a device containing the graphene film. The method for preparing the graphene film comprises the steps that a passivation layer is formed on a metal substrate; a hole is formed in the passivation layer, so that the metal substrate leaks through the hole; and the graphene film is formed on the hole where the metal substrate is leaked, and the passivation layer is covered with the graphene film. The surface of the metal substrate is covered with the passivation layer, then hole is formed in the passivation layer, and the selectivepassivation treatment of the metal substrate is achieved, so that the area and number of areas with catalytic ability of the metal substrate are controlled, and the growth rate of the graphene film can be controlled.