利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN110676152A 半导体工艺、半导体器件的制作方法以及半导体器件 无效 - 驳回

半导体工艺、半导体器件的制作方法以及半导体器件
摘要：
本申请提供了一种半导体工艺、半导体器件的制作方法以及半导体器件。该半导体工艺包括：形成具有凹槽的半导体基底；在凹槽中设置预定材料，直到预定材料的厚度大于或者等于预定厚度，其中，预定材料为流体材料；控制半导体基底旋转，半导体基底旋转的旋转轴平行于半导体基底的厚度方向；固化预定材料，形成填充结构。该半导体工艺解决了现有技术中难以无缝填充深宽比较大的凹槽的问题，保证了形成的填充结构的性能较好，进而保证了包括由该半导体工艺形成的半导体器件的性能较好。并且，该工艺容易控制，成本较低，可以广泛地应用在各种半导体器件的制作过程中。
摘要（英）：

The invention provides a semiconductor process, a manufacturing method of a semiconductor device and the semiconductor device. The semiconductor process comprises the steps of forming a semiconductorsubstrate with a groove; arranging a predetermined material in the groove until the thickness of the predetermined material is greater than or equal to the predetermined thickness, wherein the predetermined material is a fluid material; controlling the semiconductor substrate to rotate, wherein the rotation axis of the semiconductor substrate is parallel to the thickness direction of the semiconductor substrate; and solidifying the predetermined material to form a filling structure. According to the semiconductor process, the problem that it is difficult to fill a groove with a large depth-to-width ratio seamlessly in the prior art is solved, the performance of the formed filling structure is ensured to be relatively good, and the performance of a semiconductor device formed by the semiconductor process is further ensured to be relatively good. In addition, the process is easy to control and low in cost, and can be widely applied to the manufacturing process of various semiconductor devices.

0/0