Conventionally, it has been necessary to vary the cooling capacity to control the temperature of the growth face when a crystal thin film is grown, and it has been difficult to greatly vary the rate of flow of cooling water in the case of water cooling. Therefore the system needs to be of large scale and the production cost is high if the rate of flow of cooling gas is greatly varied in the case of gas cooling. According to the invention, the problems are thoroughly solved, and the control of the temperature of the surface from which a crystal thin plate is grown is easily performed, thus producing a crystal thin plate at low cost. Specifically, from that of the material of the other layer is brought into contact with a fusion of a substance from which a crystal containing at least either a material or a semiconductor material can be formed, and the temperature of the base is controlled so as to grow a crystal of a material from which the crystal can be formed on the base, thereby producing a crystal thin plate.