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发明公开
CN1469481A 存储装置 失效 - 权利终止

存储装置
摘要：
一种存储装置，具有包含由在硅构成的基板(10)上依次形成的下部电极(21)、铁电体膜(22)以及上部电极(23)所构成的电容(20)的存储单元。铁电体膜(22)，在下部电极(21)上选择性生长后形成。这样，由于在具有所希望的下部电极(21)上选择性地形成铁电体膜(22)，在铁电体膜(22)中不会有损伤部，可以实现存储单元的微细化。
摘要（英）：

A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.

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