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发明公开
CN1499590A 半导体器件及其制造方法 无效 - 撤回

半导体器件及其制造方法
摘要：
一种半导体器件制造方法，其中包括如下步骤：制备在一个表面上具有布线图案的布线基片；通过倒装片焊接把在一个表面上具有预定元件和一个连接端的电子芯片的连接端接合到该布线基片的布线图案上；在该布线基片上形成第一绝缘膜，该第一绝缘膜第一绝缘膜具有覆盖该电子芯片的膜厚或者暴露该电子芯片的至少另一个表面的膜厚；以及通过研磨该第一绝缘膜和该电子芯片的另一个表面而减小该电子芯片的厚度。
摘要（英）：

The present invention relates to a method of manufacturing a semiconductor device, which comprises the steps of preparing a wiring substrate (11) having a wiring pattern on a surface, bonding a connection terminal of an electronic chip (20), which has a predetermined element and the connection terminal on one surface, to the wiring pattern of the wiring substrate (11) by a flip-chip bonding, forming an insulating film (24) on the wiring substrate (11) to have a film thickness that covers the electronic chip (20), or a film thickness that exposes at least another surface of the electronic chip (20), and reducing a thickness of the electronic chip (20) by grinding said other surface of the electronic chip (20) and the insulating film (24).

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