The utility model discloses a N type IBC solar cell structure, including the silicon chip base member, be provided with openly passivation on the positive surface of silicon chip base member and slow down the layer, the back of the body surface of silicon chip base member is gone up the interval and is provided with comb -shaped N+ doped region and P+ doped region, the surface of N+ doped region and P+ doped region is provided with back passivation and increases the layer of turning over, back passivation is provided with positive electrode and negative electrode on increasing the layer of turning over, and positive electrode and negative electrode all run through back passivation and increase the layer of turning over to respectively with P+ doped region and N+ doped region electric connection. The utility model provides a N type IBC solar cell structure only being provided with openly passivation and slowing down the layer on the positive surface of its silicon chip base member, adopt same kind of back passivation to increase the layer of turning over on the N+ doped region at its back and the P+ doped region, and for the N type IBC solar cell structure who has now, its structure is simplified greatly.