Photodiode device and photodiode detector is disclosed. According to the embodiment, a photodiode device can include: first kind heavily doped substrate, including relative each other first surface and second surface, this first kind heavily doped substrate serves as an electrode area territory of photodiode device, the epitaxial layer of growing on the first surface of substrate, wherein, this epitaxial layer is by first kind light dope, and including the slot in order to expose the epitaxial layer in the substrate, and in the 2nd electrode area territory of second type heavily doped that the ditch inslot formed, wherein, the 2nd an electrode area territory and an electrode area territory electrical isolation.