这描述了一种特别用作随机存取存储器单元的新颖的双极动力单元。 在所述单元中，PNP晶体管驱动NPN晶体管，使得信息存储在PNP晶体管的基极节点处。 通过使用PNP晶体管作为读取晶体管，并且NPN作为写入晶体管，当以集成形式制造时，该单元利用单元隔离电容来增强存储的信息，而不增加单元中的寄生电容，从而获得0和 1信号比现有技术的电池可以获得。 这个单元格特别适用于存储器阵列。

There is provided a dynamic bipolar memory cell consisting of two complementary, respectively connected between the base and collector of transistors and in which the PNP transistor is used as a read transistor and the NPN transistor as a write transistor, and wherein the storage between the base of the read transistor and the collector the writing transistor is. The memory point is connected to a first capacitance which is higher than the emitter-base path of the sense transistor, with a second capacitor across the base-collector path of said NPN transistor and a third capacitor connected between between a fixed potential and a common point collector of the read transistor and the base of the write transistor is.