发明公开
EP0028678A2 Impurity diffusion process for producing a semiconductor device
失效
Störstoffdiffusionsverfahrenzur Herstellung einer Halbleitervorrichtung。
- 专利标题： Impurity diffusion process for producing a semiconductor device
- 专利标题（中）： Störstoffdiffusionsverfahrenzur Herstellung einer Halbleitervorrichtung。
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申请号： EP80104608.7申请日： 1980-08-05
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公开(公告)号： EP0028678A2公开(公告)日： 1981-05-20
- 发明人: Yoshida, Isao , Wada, Yasuo , Tamura, Masao , Miyao, Masanobu , Ohkura, Makoto , Natsuaki, Nobuyoshi , Tokuyama, Takashi
- 申请人： Hitachi, Ltd.
- 申请人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Strehl, Peter, Dipl.-Ing.
- 优先权： JP109165/79 19790829
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/268
摘要：
A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto arefused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance.
Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
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