公开(公告)号：EP0028678A2

公开(公告)日：1981-05-20

申请号：EP80104608.7

申请日：1980-08-05

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Wada, Yasuo ,  Tamura, Masao ,  Miyao, Masanobu ,  Ohkura, Makoto ,  Natsuaki, Nobuyoshi ,  Tokuyama, Takashi

IPC分类号： H01L21/225 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto arefused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance.
Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

摘要翻译： 含有高浓度杂质的区域（17）和与其相邻的期望区域（18）通过用激光束（10）照射而熔化，以将杂质沿横向扩散到所需区域（18）中，并使 期望的区域（18）具有低电阻。 由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

公开(公告)号：EP0028678B1

公开(公告)日：1987-05-06

申请号：EP80104608.7

申请日：1980-08-05

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Wada, Yasuo ,  Tamura, Masao ,  Miyao, Masanobu ,  Ohkura, Makoto ,  Natsuaki, Nobuyoshi ,  Tokuyama, Takashi

IPC分类号： H01L21/225 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

公开(公告)号：EP0060635B1

公开(公告)日：1986-05-14

申请号：EP82300973.3

申请日：1982-02-25

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Okabe, Takeaki ,  Katsueda, Mineo ,  Nagata, Minoru ,  Masuhara, Toshiaki ,  Ashikawa, Kazutoshi ,  Kato, Hideaki ,  Ito, Mitsuo ,  Ohtaka, Shigeo ,  Minato, Osamu ,  Sakai, Yoshio

IPC分类号： H01L27/02 ,  H01L23/56 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L27/0255 ,  H01L27/0688 ,  H01L29/7808 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP0028678A3

公开(公告)日：1984-04-25

申请号：EP80104608

申请日：1980-08-05

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Wada, Yasuo ,  Tamura, Masao ,  Miyao, Masanobu ,  Ohkura, Makoto ,  Natsuaki, Nobuyoshi ,  Tokuyama, Takashi

IPC分类号： H01L21/225 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto arefused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance. Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

公开(公告)号：EP0060635A2

公开(公告)日：1982-09-22

申请号：EP82300973.3

申请日：1982-02-25

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Okabe, Takeaki ,  Katsueda, Mineo ,  Nagata, Minoru ,  Masuhara, Toshiaki ,  Ashikawa, Kazutoshi ,  Kato, Hideaki ,  Ito, Mitsuo ,  Ohtaka, Shigeo ,  Minato, Osamu ,  Sakai, Yoshio

IPC分类号： H01L27/02 ,  H01L23/56 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L27/0255 ,  H01L27/0688 ,  H01L29/7808 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor integrated circuit device including a vertical type MOSFET and a gate protection element for the MOSFET is disclosed in which the vertical type MOSFET is made up of a silicon layer (1) of n-type conductivity formed on an n +- type silicon substrate (13), a base region (10) of p-type conductivity formed in the surface of the silicon layer (1) of n-type conductivity, an n +- type source region (11) provided in the base region (10), and a gate electrode (9) formed on a portion of the base region (10) through a gate insulating film (2), and uses the silicon substrate (13) as the drain, and in which the gate protection element is formed of a polycrystalline silicon layer (4,5,6) which is provided on the base region (10) through an insulating film (3) and has an n + -p-n + structure.