发明公开
EP0055932A1 Schottky gate electrode for a compound semiconductor device, and method of manufacturing it
失效
对于化合物半导体器件和其制备方法肖特基栅电极。
- 专利标题： Schottky gate electrode for a compound semiconductor device, and method of manufacturing it
- 专利标题（中）： 对于化合物半导体器件和其制备方法肖特基栅电极。
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申请号： EP81306151.2申请日： 1981-12-24
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公开(公告)号： EP0055932A1公开(公告)日： 1982-07-14
- 发明人: Yokoyama, Naoki
- 申请人： FUJITSU LIMITED
- 申请人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 代理机构： Sunderland, James Harry
- 优先权： JP189544/80 19801230
- 主分类号： H01L29/64
- IPC分类号： H01L29/64 ; H01L21/28
摘要：
A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800°C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then effect the recrystallization of the semi-conductor and the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self alignment relative to the gate electrode.
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