发明公开
EP0083089A3 Process for forming self-aligned metallization patterns for semiconductor devices
失效
用于形成半导体器件的自对准金属化图案的方法
- 专利标题： Process for forming self-aligned metallization patterns for semiconductor devices
- 专利标题（中）： 用于形成半导体器件的自对准金属化图案的方法
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申请号： EP82111971申请日： 1982-12-27
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公开(公告)号： EP0083089A3公开(公告)日： 1985-01-23
- 发明人: Abbas, Shakir Ahmed , Magdo, Ingrid Emese
- 申请人： International Business Machines Corporation
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 优先权： US335894 19811230
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/48
摘要：
A process is described which achieves self-aligned contacts and electrodes (42, 44, 46) having very close spacing in integrated circuit devices by use of a pattern of dielectric material (30) having a thickness in the order of a micrometer or less. A pattern of recessed oxide isolation (32) between device areas in the substrate (10) is also self-aligned by this process. The result is a substantial planar integrated circuit structure. The process is applicable to either bipolar transistor integrated circuits or MOS field effect transistor integrated circuits.
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