发明公开
- 专利标题: Glass-molded semiconductor device
- 专利标题(中): Halbleiteranordnung在Glasverkapselung。
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申请号: EP83100477.5申请日: 1983-01-20
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公开(公告)号: EP0084859A2公开(公告)日: 1983-08-03
- 发明人: Hachino, Hiroaki , Misawa, Yutaka , Ishizuka, Takeshi
- 申请人: Hitachi, Ltd.
- 申请人地址: 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构: Beetz & Partner Patentanwälte
- 优先权: JP10122/82 19820127
- 主分类号: H01L23/30
- IPC分类号: H01L23/30 ; H01L23/48
摘要:
An axial-lead glass-molded diode having at least one semiconductor element (3) clamped between a pair of electrode leads (2) by means of a brazing material, and provided with glass (5) covering the periphery thereof by means of molding. Each of the electrode leads comprises an electrode (6) composed of a core material (6a) and a tubular material (6b) and a lead (2) made of a material of the same kind as the core material (6a) and welded thereto. As the core material, a metal excellent in thermal and electrical conductivities, such as copper, is employed, while as the tubular material a metal having a thermal expansion coefficient smaller than that of the core material, such as an invar alloy, is employed, and the core material and the tubular material are metallurgically connected together. The thermal expansion coefficient of the electrode in the longitudinal sectional direction can be regulated by adjusting the thickness of the tubular material with respect to the core material in the crosssectional direction.
公开/授权文献
- EP0084859B1 Glass-molded semiconductor device 公开/授权日:1988-09-21
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