发明授权
- 专利标题: Semiconductor device comprising dielectric isolation regions
- 专利标题(中): 包含电介质隔离区的半导体器件
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申请号: EP83109585.6申请日: 1983-09-26
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公开(公告)号: EP0111651B1公开(公告)日: 1989-08-09
- 发明人: Tamaki, Yoichi , Shiba, Takeo , Sagara, Kazuhiko , Kawamura, Masao
- 申请人: HITACHI, LTD.
- 申请人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 当前专利权人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构: Strehl, Peter, Dipl.-Ing.
- 优先权: JP168355/82 19820929
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
公开/授权文献
- EP0111651A2 Semiconductor device comprising dielectric isolation regions 公开/授权日:1984-06-27
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