发明公开
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 一种用于制造半导体器件的工艺。
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申请号： EP84102143.9申请日： 1984-02-29
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公开(公告)号： EP0118102A2公开(公告)日： 1984-09-12
- 发明人: Nakazato, Kazuo , Nakamura, Tohru , Miyazaki, Takao , Natsuaki, Nobuyoshi , Ogirima, Masahiko , Nagata, Minoru
- 申请人： HITACHI, LTD.
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Strehl, Peter, Dipl.-Ing.
- 优先权： JP35815/83 19830307
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L29/72 ; H01L27/06
摘要：
The invention deals with a semiconductor device which comprises a semiconductor substrate (11) of a first conductivity type, a semiconductor region (14, 15) formed on said substrate, and a first insulation film (120, 77) provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer (79, 121) formed in the periphery of said semiconductor region (14, 15) thereby to reduce the parasitic capacitance, and wherein said insulation film (79, 121) is stretched and arranged on the lower side of said semiconductor region.
公开/授权文献
- EP0118102B1 Method for manufacturing a semiconductor device 公开/授权日：1993-05-12
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