摘要:
A radio paging system with voice transfer function for transmitting a voice message input from an ordinary push-button telephone set (1) to a small-sized receive-only unsophisticated radio pager (33). A paging station (14) is provided to transmit by radio the message from a telephone network (7) to the radio pager (33) as follows: voice information constituting the message is first converted from analog to digital format, compressed, stored in memory (6), and scrambled by a privacy function part (7) for transmission. The radio pager (33) in turn demodulates the received information, stores it in memory (24), retrieves a necessary message therefrom as designated, descrambles the designated message from scrambled state, expands the message from compressed state, and outputs the message as an audible output (30). In this manner, the user carrying the radio pager is able to get the message from the caller without the risk of being tapped by a third party.
摘要:
A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film (17, 19, 110) electrodes (10, 10', 10") are led out by a polycrystalline silicon film (18) formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.
摘要:
According to a semiconductor integrated circuit ot the present invention, a normal transistor (Q 2 ; Q 4 ) and an inverse transistor (Q 1 ; Q 3 ) are formed in a single isolated region, and both the bipolar transistors are connected in series and used in the integrated circuit, thereby to enhance the density of integration. Besides, in the semiconductor integrated circuit of the present invention, the collector region of the normal transistor (Q 2 ; Q 4 ) and the emitter region of the inverse transistor (Q 1 ; Q 3 ) are disposed as a common region.
摘要:
A wide-band and high-gain differential amplifier adapted to amplify transmitted optical signals of the GHz band is constituted by GaAs MESFET's. Two MESFET's (Q1, Q2) are differentially connected to each other. Drains of the MESFET's (Q1, Q2) are connected to load resistance (R L ) via a source-drain path of other MESFET's (Q3, Q4) whose gates are grounded in AC-wise. Current by-passing means (4) are connected to the sources of the other MESFET's (Q3, Q4). DC bias currents of the differential pair of MESFET's (Q1, Q2) are set to relatively large values to increase the mutual conductance gm of the differential pair of MESFET's (Q1, Q2). Despite a large DC bias current, the current-by-passing means (4) decrease the DC voltage drops across the load resistance (R L ), and enable the differential amplifier to operate on a low power source voltage.
摘要:
The invention deals with a semiconductor device which comprises a semiconductor substrate (11) of a first conductivity type, a semiconductor region (14, 15) formed on said substrate, and a first insulation film (120, 77) provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer (79, 121) formed in the periphery of said semiconductor region (14, 15) thereby to reduce the parasitic capacitance, and wherein said insulation film (79, 121) is stretched and arranged on the lower side of said semiconductor region.
摘要:
A semiconductor device has a substrate (1, 2) provided with a mesa region (11), wherein an insulation film (6) is provided in regions other than the mesa region (11), and a polycrystalline silicon layer (10-1) and a metal silicide layer (10-2) are formed over said insulation film (6). this multilayer structure consisting of a take-out portion for at least one of the emitter (4-1), base (4-3), and collector (4-2) members of a bipolar transistor provided in the mesa region (11).
摘要:
A semiconductor integrated circuit device including a vertical type MOSFET and a gate protection element for the MOSFET is disclosed in which the vertical type MOSFET is made up of a silicon layer (1) of n-type conductivity formed on an n +- type silicon substrate (13), a base region (10) of p-type conductivity formed in the surface of the silicon layer (1) of n-type conductivity, an n +- type source region (11) provided in the base region (10), and a gate electrode (9) formed on a portion of the base region (10) through a gate insulating film (2), and uses the silicon substrate (13) as the drain, and in which the gate protection element is formed of a polycrystalline silicon layer (4,5,6) which is provided on the base region (10) through an insulating film (3) and has an n + -p-n + structure.
摘要:
A radio paging system with voice transfer function for transmitting a voice message input from an ordinary push-button telephone set (1) to a small-sized receive-only unsophisticated radio pager (33). A paging station (14) is provided to transmit by radio the message from a telephone network (7) to the radio pager (33) as follows: voice information constituting the message is first converted from analog to digital format, compressed, stored in memory (6), and scrambled by a privacy function part (7) for transmission. The radio pager (33) in turn demodulates the received information, stores it in memory (24), retrieves a necessary message therefrom as designated, descrambles the designated message from scrambled state, expands the message from compressed state, and outputs the message as an audible output (30). In this manner, the user carrying the radio pager is able to get the message from the caller without the risk of being tapped by a third party.