发明公开
- 专利标题： Silicon sources suitable for use in molecular beam epitaxy deposition
- 专利标题（中）： 适用于分子束外延沉积的硅源
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申请号： EP84105836申请日： 1984-05-23
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公开(公告)号： EP0127838A3公开(公告)日： 1987-05-20
- 发明人: Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rosenberg, James Jordan , Woodall, Jerry MacPherson , Wright, Steven Lorenz
- 申请人： International Business Machines Corporation
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 优先权： US501571 19830606
- 主分类号： C30B23/06
- IPC分类号： C30B23/06 ; C30B29/06
摘要：
A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas. The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with and extending between electrical contact headers 18,19. A current source is connected in series with the source and causes resistance heating of the source.
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