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公开(公告)号：EP4217530B1
公开(公告)日：2024-10-30
申请号：EP21794709.2
申请日：2021-09-23
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2.发明公开
公开(公告)号：EP4292125A1
公开(公告)日：2023-12-20
申请号：EP22752037.6
申请日：2022-02-10
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公开(公告)号：EP4217527A1
公开(公告)日：2023-08-02
申请号：EP21794712.6
申请日：2021-09-23
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公开(公告)号：EP4209626A1
公开(公告)日：2023-07-12
申请号：EP23153067.6
申请日：2020-03-03
发明人： Kaneko, Tadaaki
摘要： The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor. An SiC substrate 10 and an SiC material 20, which has a lower doping concentration than said SiC substrate 10, are heated facing one another, and material is transported from the SiC material 20 to the SiC substrate 10 to form an SiC epitaxial layer 11. As a result, in comparison with the existing method (chemical vapour deposition), it is possible to provide an SiC epitaxial substrate manufacturing method with a reduced number of parameters to be controlled.
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公开(公告)号：EP4172387A1
公开(公告)日：2023-05-03
申请号：EP21740153.8
申请日：2021-06-22
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公开(公告)号：EP4137622A1
公开(公告)日：2023-02-22
申请号：EP21788428.7
申请日：2021-03-30
发明人： KANEKO, Tadaaki , DOJIMA, Daichi
摘要： An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in the growth layer.
The present invention is a method for manufacturing a semiconductor substrate, which includes: an embrittlement processing step S10 of reducing strength of an underlying substrate 10; and a crystal growth step S20 of forming the growth layer 20 on the underlying substrate 10. In addition, the present invention is a method for suppressing the occurrence of cracks in the growth layer 20, and this method includes an embrittlement processing step S10 of reducing the strength of the underlying substrate 10 before forming the growth layer 20 on the underlying substrate 10.-
7.发明公开
公开(公告)号：EP4036282A1
公开(公告)日：2022-08-03
申请号：EP20868168.4
申请日：2020-09-24
发明人： KANEKO, Tadaaki
IPC分类号： C30B29/36 , C23C14/06 , C23C16/42 , C30B23/06 , H01L21/205 , H01L29/861 , H01L29/868
摘要： The present invention addresses the issue of providing: an SiC substrate having a dislocation conversion layer that can reduce resistance; and a novel technology pertaining to SiC semiconductors. This SiC substrate and SiC semiconductor device comprise a dislocation conversion layer 12 having a doping concentration of at least 1 × 10 15 cm -3 . As a result of comprising a dislocation conversion layer 12 having this kind of doping concentration: expansion of basal plane dislocations and the occurrence of high-resistance stacking faults can be suppressed; and resistance when SiC semiconductor devices are produced can be reduced.
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8.发明公开
公开(公告)号：EP3960911A1
公开(公告)日：2022-03-02
申请号：EP21192965.8
申请日：2021-08-25
申请人： SKC Co., Ltd.
发明人： PARK, Jong Hwi , KU, Kap-Ryeol , KIM, Jung-Gyu , CHOI, Jung Woo , KO, Sang Ki , JANG, Byung Kyu , YANG, Eun Su , SEO, Jung Doo
摘要： A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
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9.发明公开
公开(公告)号：EP3916138A1
公开(公告)日：2021-12-01
申请号：EP21175297.7
申请日：2021-05-21
申请人： SKC Co., Ltd.
发明人： JANG, Byung Kyu , PARK, Jong Hwi , YANG, Eun Su , CHOI, Jung Woo , KO, Sang Ki , KU, Kap Ryeol , KIM, Jung-Gyu
摘要： A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.
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公开(公告)号：EP3856948A2
公开(公告)日：2021-08-04
申请号：EP19795203.9
申请日：2019-10-28
发明人： BRAUN, Wolfgang , MANNHART, Jochen
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