A semiconductor device such as a transistor or gate turn-off thyristor provided with a control electrode for improving the current cut-off performance, is disclosed in which an emitter layer (1d) of a semiconductor substrate is formed of a plurality of strip-shaped regions, a base layer (1c) adjacent to the strip-shaped regions is exposed to one principal surface of the semiconductor substrate together with the strip-shaped regions, one main electrode (2) is provided on each strip-shaped region, first and second control electrodes (3b, 3a) are provided on the base layer, on one and the other sides of each strip-shaped region viewed in the direction of the width thereof, respectively, the other main electrode is provided on the second principal surface of the semiconductor substrate, and a gate terminal (6) is not connected to the first control electrode (3b) but connected to the second control electrode (3a), in order to draw out carriers unequally by the first and second control electrodes at a turn-off period. At the initial stage of turn-off action, carriers are drawn out mainly by the second control terminal (3a), and a conductive region contracts so as to be limited to the first control electrode side. At the final stage of turn-off action, carriers are drawn out considerably by the first control electrode (3b), to complete the turn-off action.