发明公开
EP0166342A2 Method of producing a gallium arsenide field effect transistor device
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Verfahren zur Herstellung von einem Feldeffekttransistor aus Galliumarsenid。
- 专利标题： Method of producing a gallium arsenide field effect transistor device
- 专利标题（中）： Verfahren zur Herstellung von einem Feldeffekttransistor aus Galliumarsenid。
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申请号： EP85107442.7申请日： 1985-06-19
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公开(公告)号： EP0166342A2公开(公告)日： 1986-01-02
- 发明人: Tiwari, Sandip
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Hobbs, Francis John (GB)
- 优先权： US626563 19840629
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/225 ; H01L29/80 ; H01L29/04
摘要：
A method of producing a FET in a gallium arsenide substrate comprises forming a gate (2) on a [100] surface of the gallium arsenide substrate in the [011] orientation, ion implanting active impurities to form FET source (5) and drain (6) regions which are self-aligned with respect to the gate (2), and annealing the structure subsequently to the ion implanting to cause the active impurities to diffuse laterally and thereby form a channel region beneath the gate (2).
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