公开(公告)号：EP4200911A1

公开(公告)日：2023-06-28

申请号：EP21901531.0

申请日：2021-12-03

Applicant: Amplexia, LLC ,  X-FAB Global Services GmbH

Inventor： TONER, Brendan ,  LIU, Zhengchao ,  DOLNY, Gary, M. ,  RICHARDS, William, R, Jr. ,  REGHUNATHAN, Manoj, Chandrika ,  EISENBRANDT, Stefan ,  ELLMERS, Christoph

IPC: H01L29/78 ,  H01L21/225 ,  H01L27/02 ,  H01L29/66 ,  H01L29/80

公开(公告)号：EP3561883A1

公开(公告)日：2019-10-30

申请号：EP19172826.0

申请日：2002-02-22

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Weeks, Warren ,  Piner, Edwin ,  Borges, Ricardo ,  Linthicum, Kevin

IPC: H01L33/00 ,  H01S5/323 ,  H01S5/02 ,  H01L33/38 ,  H01L29/417 ,  H01L29/80 ,  H01L47/02 ,  H01L29/861 ,  H01L29/06 ,  H01L33/32 ,  H01L29/20

Abstract: The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material (14) formed over a substrate (12), such as silicon. The device also may include one or more non-conducting layers (15) between the substrate (12) and the gallium nitride material (14) which can aid in the deposition of the gallium nitride material. A via (24) is provided which extends from the backside (22) of the device through the non-conducting layer(s) (15) to enable electrical conduction between an electrical contact (20) deposited within the via (21) and, for example, an electrical contact (16) on the topside of the device. Thus, devices of the invention may be vertically conducting. In other cases, the vias may be free of electrical contacts, for example, to enhance light extraction. Exemplary devices include laser diodes (LDs), light emitting diodes (LEDs), power rectifier diodes, FETs (e.g., HFETs), Gunn-effect diodes, and varactor diodes, amongst others.

公开(公告)号：EP2887402A2

公开(公告)日：2015-06-24

申请号：EP15153536.6

申请日：2008-09-12

Applicant: TRANSPHORM INC.

Inventor： Honea, James ,  Parikh, Primit ,  Wu, Yifeng ,  Ben-Yaacov, Ilan

IPC: H01L29/78 ,  H01L29/80 ,  H01L27/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7781

Abstract: Bidirectional switches are described. The bidirectional switches include first and a second III-N based high electron mobility transistor. In some embodiments, the source of the first transistor is in electrical contact with a source of the second transistor. In some embodiments, the drain of the first transistor is in electrical contact with a drain of the second transistor. In some embodiments, the two transistors share a drift region and the switch is free of a drain contact between the two transistors. Matrix converters can be formed from the bidirectional switches.

Abstract translation: 描述了双向开关。 双向开关包括第一和第二III-N基高电子迁移率晶体管。 在一些实施例中，第一晶体管的源极与第二晶体管的源极电接触。 在一些实施例中，第一晶体管的漏极与第二晶体管的漏极电接触。 在一些实施例中，两个晶体管共享漂移区，并且开关在两个晶体管之间没有漏极接触。 矩阵转换器可以由双向开关形成。

公开(公告)号：EP2762615A3

公开(公告)日：2014-10-29

申请号：EP14166214.8

申请日：2010-04-06

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Harada, Shin ,  Sasaki, Makoto ,  Masuda, Takeyoshi

IPC: C30B29/36 ,  C23C16/32 ,  C23C16/42 ,  C30B25/20 ,  H01L21/02 ,  H01L21/205 ,  H01L21/329 ,  H01L21/336 ,  H01L21/337 ,  H01L21/338 ,  H01L29/12 ,  H01L29/47 ,  H01L29/78 ,  H01L29/80 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L29/7802 ,  B24B7/17 ,  B24B7/228 ,  B24B37/08 ,  B24B37/10 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/02 ,  H01L29/045 ,  H01L29/063 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8128 ,  H01L29/8611 ,  H01L29/872

Abstract: A substrate with a thin film, comprising: a substrate composed of silicon carbide and having a main surface having a diameter of 2 inches or greater; and a thin film composed of silicon carbide and formed on one said main surface, and a value for bow at said main surface being not smaller than -40 µm and not greater than 0 µm, and a value for warp at said main surface being not smaller than 0 µm and not greater than 40 µm.

公开(公告)号：EP2677544A1

公开(公告)日：2013-12-25

申请号：EP13164120.1

申请日：2006-03-16

Applicant: FUJITSU LIMITED

Inventor： Kikkawa, Toshihide

IPC: H01L29/80 ,  H01L29/20 ,  H01L29/778 ,  H01L29/267 ,  H01L29/66 ,  H01L29/205 ,  H01L29/51

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787

Abstract: A compound semiconductor device comprising: a GaN based carrier transit layer formed over a semiconductor substrate; a GaN based carrier supply layer formed on said carrier transit layer; a GaN based protective layer formed on said carrier supply layer; a source electrode, a drain electrode and a gate electrode formed on said protective layer; an AlN layer formed on said protective layer, and positioned between said gate electrode and said source electrode, and between said gate electrode and said drain electrode; and an insulator layer formed on said AlN layer; wherein a GaN based compound semiconductor layer is formed between said AlN layer and said insulator layer, and a silicon layer is formed between said AlN layer and said compound semiconductor layer.

Abstract translation: 一种化合物半导体器件，包括：在半导体衬底上形成的基于GaN的载流子传输层; 在所述载流子传输层上形成的基于GaN的载流子供应层; 在所述载流子供应层上形成的GaN基保护层; 形成在所述保护层上的源电极，漏电极和栅电极; 形成在所述保护层上并位于所述栅电极和所述源电极之间以及所述栅电极和所述漏电极之间的AlN层; 以及在所述AlN层上形成的绝缘体层; 其中在所述AlN层和所述绝缘层之间形成GaN基化合物半导体层，并且在所述AlN层和所述化合物半导体层之间形成硅层。

公开(公告)号：EP1616864B1

公开(公告)日：2013-12-18

申请号：EP04726312.4

申请日：2004-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： SHITAGAKI, Tomoko, SEMICONDUCTOR ENERGY LAB CO LTD ,  TOKUDA, Atsushi, SEMICONDUCTOR ENERGY LAB. CO. LTD ,  ABE, Hiroko, SEMICONDUCTOR ENERGY LAB. CO., LTD. ,  NOMURA, Ryoji, SEMICONDUCTOR ENERGY LAB. CO., LTD. ,  SEO, Satoshi, SEMICONDUCTOR ENERGY LAB. CO., LTD.

IPC: C07D241/40 ,  C07D403/10 ,  C07D413/10 ,  C07D417/10 ,  C09K11/06 ,  H01L29/786 ,  H01L51/00 ,  H01L29/80 ,  H05B33/14 ,  H05B33/22

CPC classification number: C07D403/14 ,  C07D241/42 ,  C07D401/10 ,  C07D401/14 ,  C09K11/06 ,  C09K2211/1044 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/5012 ,  H01L51/5016 ,  H05B33/14 ,  Y10S428/917

Abstract: Target is to provide an organic compound material having a bipolar character. A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R 1 - R 12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R 9 and R 10 , R 10 and R 11 , and R 11 and R 12 are each independent or respectively mutually bonded to form an aromatic ring. Ar 1 - Ar 4 each independently represents an aryl group or a heterocyclic residue group. Ar 1 , Ar 2 , Ar 3 and Ar 4 are each independent or Ar 1 and Ar 2 , and Ar 3 and Ar 4 are respectively mutually bonded directly, or Ar 1 and Ar 3 , and Ar 3 and Ar 4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.

公开(公告)号：EP2319083A4

公开(公告)日：2013-11-13

申请号：EP09795159

申请日：2009-07-09

Applicant: POWER INTEGRATIONS INC

Inventor： SHERIDAN DAVID C ,  RITENOUR ANDREW

IPC: H01L29/80 ,  H01L21/337

CPC classification number: H01L29/1058 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/7832 ,  H01L29/8083 ,  H01L29/8122

公开(公告)号：EP2587528A1

公开(公告)日：2013-05-01

申请号：EP11798127.4

申请日：2011-06-21

Applicant: The University Of Sheffield ,  Powdec K.k.

Inventor： NAKAJIMA, Akira ,  EKKANATH MADATHIL, Sankara Narayanan ,  SUMIDA, Yasunobu ,  KAWAI, Hiroji

IPC: H01L21/338 ,  H01L29/06 ,  H01L29/41 ,  H01L29/47 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L29/78 ,  H01L29/0619 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/861 ,  H01L29/872

Abstract: A low-loss GaN-based semiconductor device can be easily realized by making use of the polarization junction, fundamentally easing the peak electric field generating in a region of a conductive channel, and along with making high voltage resistance, and suppressing the generation of current collapse at the practical level.
The semiconductor device has the In z Ga 1-z N layer 11 (where 0 ≤ z x Ga 1-x N layer 12 (where 0 y Ga 1-y N layer 13 (where 0 ≤ y w Ga 1-w N layer 14 (where 0 ≤ w y Ga 1-y N layer 13 in the vicinity part of a hetero-interface between the Al x Ga 1-x N layer 12 and the In y Ga 1-y N layer 13, and the two-dimensional electron gas 16 is formed in the In z Ga 1-z N layer 16 in the vicinity part of a hetero-interface between the In z Ga 1-z N layer 11 and the Al x Ga 1-x N layer 12.

Abstract translation: 通过利用偏振结，可以容易地实现低损耗的GaN基半导体器件，从根本上缓和在导电沟道的区域中产生的峰值电场，并且随着提高耐电压性，并且抑制电流的产生 在实践层面崩溃。 半导体器件具有InzGa1-zN层11（其中0≤z<1），AlxGa1-xN层12（其中0

公开(公告)号：EP2582655A1

公开(公告)日：2013-04-24

申请号：EP11795855.3

申请日：2011-06-14

Applicant: Ricoh Company Ltd.

Inventor： GOTO, Daisuke ,  YAMAMOTO, Satoshi ,  SAGISAKA, Toshiya ,  KATO, Takuji ,  TANO, Takanori ,  SHINODA, Masato ,  MATSUMOTO, Shinji ,  MOHRI, Masataka ,  YUTANI, Keiichiro

IPC: C07C69/28 ,  C07C69/013 ,  C07C69/63 ,  C07D495/04 ,  C07D495/22 ,  H01L21/336 ,  H01L29/786 ,  H01L29/80 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC classification number: C07C69/013 ,  C07C1/213 ,  C07C1/22 ,  C07C17/357 ,  C07C17/363 ,  C07C69/24 ,  C07C69/28 ,  C07C69/63 ,  C07C2602/10 ,  C07C2603/26 ,  C07C2603/50 ,  C07C2603/52 ,  C07C2603/54 ,  C07D495/04 ,  C07D495/22 ,  C09D5/24 ,  C09D11/52 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/001 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0558 ,  C07C25/22 ,  C07C15/20 ,  C07C15/60

Abstract: A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q
2 to Q
5 each represent a hydrogen atom, a halogen atom or a monovalent organic group; Q
1 and Q
6 each represent a hydrogen atom or a monovalent organic group other than the leaving substituent; and among the monovalent organic groups represented by Q
1 to Q
6 , adjacent monovalent organic groups may be linked together to form a ring.

公开(公告)号：EP2407464A4

公开(公告)日：2013-04-17

申请号：EP10750871

申请日：2010-03-10

Applicant: SUMITOMO CHEMICAL CO

Inventor： IE YUTAKA ,  OKABE MAKOTO ,  ASO YOSHIO ,  UEDA MASATO

IPC: C07D333/78 ,  H01L29/786 ,  H01L29/80 ,  H01L51/05 ,  H01L51/30 ,  H01L51/42

CPC classification number: H01L51/0068 ,  C07D333/78 ,  C07D409/14 ,  H01L51/0072 ,  H01L51/0558 ,  H01L51/42 ,  Y02E10/549