公开(公告)号：EP3703134B1

公开(公告)日：2024-04-17

申请号：EP18871738.3

申请日：2018-10-29

IPC分类号： H01L29/16 ,  H01L29/772 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02 ,  G01N27/414

CPC分类号： G01N27/4146 ,  G01N27/4145 ,  H10K85/6572 ,  H10K10/486

公开(公告)号：EP4350442A2

公开(公告)日：2024-04-10

申请号：EP24158538.9

申请日：2019-08-20

申请人： Laird Technologies, Inc.

发明人： MCBAIN, Douglas S. ,  DIXON, Paul Francis ,  SONG, John ,  ENGLISH, Gerald R. ,  STRADER, Jason L.

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/324 ,  H01L21/67 ,  H10K99/00 ,  H05K9/00

摘要： The present invention discloses a thermal management and/or electromagnetic interference (EMI) mitigation material comprising a multilayer film structure defined by a plurality of layers having different filler densities per layer such that the multilayer film structure has differential filler loading within the layers and/or a filler density gradient that increases or decreases from a top layer to a bottom layer.

公开(公告)号：EP3970899B1

公开(公告)日：2023-11-22

申请号：EP20306057.9

申请日：2020-09-18

发明人： MAZZAMUTO, Fulvio ,  PERROT, Sylvain ,  DOURI, Nabil ,  THEBAULT, Guillaume Vincent ,  HUET, Karim Mikaël ,  GONZALEZ TRUJILLO, Guillermo Abraham

IPC分类号： B23K26/03 ,  B23K26/042 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/352 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  B23K101/40 ,  B23K101/42

公开(公告)号：EP4085478B1

公开(公告)日：2023-10-25

申请号：EP20845581.6

申请日：2020-12-15

发明人： GAUDIN, Gweltaz

IPC分类号： H01L21/18 ,  H01L21/02 ,  H01L21/324 ,  H01L29/16

公开(公告)号：EP4033519A1

公开(公告)日：2022-07-27

申请号：EP20864989.7

申请日：2020-06-18

申请人： Hitachi, Ltd. ,  Toyo Tanso Co., Ltd.

发明人： KOBAYASHI, Keisuke ,  KONISHI. Kumiko ,  SHIMA, Akio ,  YABUKI, Norihito ,  SUDOH, Yusuke ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC分类号： H01L21/324 ,  H01L29/78 ,  H01L29/12 ,  H01L21/336

摘要： To provide a technique capable of improving performance and reliability of a semiconductor device. An n - -type epitaxial layer (12) is formed on an n-type semiconductor substrate (11), and a p + -type body region (14), n + -type current spreading regions (16, 17), and a trench TR are formed in the n - -type epitaxial layer (12). A bottom surface B1 of the trench TR is located in the p + -type body region (14), a side surface S1 of the trench TR is in contact with the n + -type current spreading region (17), and a side surface S2 of the trench TR is in contact with the n + -type current spreading region (16). Here, a ratio of silicon is higher than a ratio of carbon in an upper surface T1 of the r - -type epitaxial layer (12), and the bottom surface B1, the side surface S1, and the side surface S2 of the trench. Furthermore, an angle θ1 at which the upper surface T1 of the n - -type epitaxial layer (12) is inclined with respect to the side surface S1 is smaller than an angle θ2 at which the upper surface T1 of the n - -type epitaxial layer (12) is inclined with respect to the side surface S2.

公开(公告)号：EP3098840B1

公开(公告)日：2022-05-11

申请号：EP15880882.4

申请日：2015-07-28

发明人： CHOI, Seung Jin ,  KIM, Hee Cheol ,  CHOI, Hyun Sic

IPC分类号： H01L21/77 ,  H01L27/12 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/324

公开(公告)号：EP3940747A1

公开(公告)日：2022-01-19

申请号：EP20768929.0

申请日：2020-03-06

申请人： Young Chang Chemical Co., Ltd.

发明人： LEE, Su Jin ,  KIM, Gi Hong ,  LEE, Seung Hun ,  LEE, Seung Hyun

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  H01L21/324 ,  G03F7/20 ,  G03F7/16

摘要： The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

公开(公告)号：EP3893285A1

公开(公告)日：2021-10-13

申请号：EP19894255.9

申请日：2019-04-12

申请人： LG Electronics Inc.

发明人： SHIM, Goohwan ,  YANG, Youngsung

IPC分类号： H01L31/18 ,  H01L21/324 ,  H01L31/0376 ,  H01L31/0224

摘要： The present invention relates to a method for manufacturing a solar cell, the method comprising the steps of: preparing a substrate; forming an adhesive layer on the substrate; and forming, on the adhesive layer, a perovskite solar cell having a perovskite absorption layer, wherein an optical treatment step of providing light is performed at least once between the step of preparing the substrate and the step of forming the perovskite solar cell.

公开(公告)号：EP3874536A1

公开(公告)日：2021-09-08

申请号：EP19877777.3

申请日：2019-10-21

申请人： ENTEGRIS INC.

发明人： UVAIS, Ajith ,  BISHOP, Steve Edgar

IPC分类号： H01L21/033 ,  H01L21/04 ,  H01L21/02 ,  H01L21/311 ,  H01L21/324

公开(公告)号：EP3844569A1

公开(公告)日：2021-07-07

申请号：EP19853953.8

申请日：2019-08-22

申请人： Honeywell International Inc.

发明人： VARAPRASAD, Desaraju ,  XIE, Songyuan

IPC分类号： G03F7/20 ,  G03F7/004 ,  H01L21/027 ,  H01L21/324