发明公开
- 专利标题： Method of manufacturing semiconductor devices
- 专利标题（中）： 制造半导体器件的方法
-
申请号： EP85304719.9申请日： 1985-07-02
-
公开(公告)号： EP0167391A2公开(公告)日： 1986-01-08
- 发明人: Kakimoto, Seizo , Kudo, Jun , Koba, Masayoshi
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545 JP
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545 JP
- 代理机构： Wright, Peter David John (GB)
- 优先权： JP137583/84 19840702
- 主分类号： H01L21/263
- IPC分类号： H01L21/263 ; H01L21/20
摘要：
The preferred embodiment discloses a new method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film (6) via annealing means by radiation of energy beams (9), wherein the manufacturing method comprises: the formation of a belt-shaped high melting point metal film (8) having a width narrower than the diameter of the energy beams on either amorphous or polycrystalline thin film; beam scanning in parallel with the said belt by means of radiating energy beams onto the said belt-shaped high melting point metal film; and generation of a nucleus in a limited area beneath the belt-shaped thin film at the moment the film-covered amorphous or polycrystalline area dissolves and recrystallizes so that the said recrystallized area can eventually grow into a moncrystalline configuration.
公开/授权文献
- EP0167391B1 Method of manufacturing semiconductor devices 公开/授权日：1990-05-09
信息查询
IPC分类:
