本发明涉及一种用于制造用于深X射线光刻的掩模的方法。 这里，初级薄层掩模用薄，主吸收体结构的通过复制软X射线的图案被转移到X射线抗蚀剂层，其层厚度对应于通过电沉积将显影后，产生所述掩模的吸收器图案的厚度。 为了避免复制，提出了以下时传输误差：直接在支撑膜的一侧主薄膜掩模的形成; 施加正抗蚀剂在载体膜的另一侧层; 照射正透视抗蚀剂具有大致平行光，从主吸收体结构，其出现不阴影，照射区域层; 在如此产生的间隙溶解出来的正透视的非阴影，曝光区域的抗蚀剂层，高原子序数的元素的电沉积，去除剩余的抗蚀剂材料和蚀刻该主吸收体结构。

The invention relates to a method of making a mask for deep X-ray lithography. Here, the pattern of a primary thin-layer mask with a thin, primary absorber structure by copying soft X-ray is transferred to an X-ray resist layer whose layer thickness corresponds to the thickness of the after Entwikkein by electrodeposition to be generated absorber pattern of the mask. To avoid Obertragungsfehlern when recopying is proposed: generating the primary mask thin film directly on a side of the carrier membrane; Applying a positive resist layer on the other side of the carrier membrane; Irradiating the positive X-ray resist layer with an approximately parallel X-rays, which arise from the primary absorber structure not shaded, irradiated regions; Dissolving out the non-shadowed, irradiated areas of the positive X-ray resist layer, electrodeposition of high atomic number elements in the intermediate spaces thus produced, removing the remaining resist material and etching the primary absorber structure.