发明公开
- 专利标题: Field-effect transistor
- 专利标题(中): 场效应晶体管
-
申请号: EP87302544.9申请日: 1987-03-24
-
公开(公告)号: EP0239368A3公开(公告)日: 1990-02-07
- 发明人: Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Miura, Akira c/o Patent Division , Azuma, Makoto c/o Patent Division , Nakayama, Toshio c/o Patent Division
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构: Freed, Arthur Woolf
- 优先权: JP66278/86 19860325
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; H01L29/41 ; H01L29/78
摘要:
A field-effect transistor comprising a semiconductor substrate (11) having source and drain regions (12, 13) and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate (11) and the gate electrode (19). When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate (11).
公开/授权文献
- EP0239368B1 Field-effect transistor 公开/授权日:1995-03-01
信息查询
IPC分类: