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公开(公告)号：EP0215683A3
公开(公告)日：1989-02-08
申请号：EP86307206.2
申请日：1986-09-18
发明人： Gemma, Nobuhiro c/o Patent Division , Miura, Akira c/o Patent Division , Mizushima, Koichi c/o Patent Division , Azuma, Makoto c/o Patent Division , Mori, Yasushi c/o Patent Division
IPC分类号： G02F1/17
CPC分类号： H01L51/0078 , B82Y20/00 , G02F1/017 , G02F1/15 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0054 , H01L51/0055 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0068 , H01L51/0072 , H01L51/0075 , H01L51/0077 , H01L51/0083 , H01L51/0084 , H01L51/424
摘要： An organic thin film display element comprises an organic thin film containing donor molecules and acceptor molecules and a pulse voltage source for causing a charge transfer between the donor molecules and the acceptor molecules. The charge transfer varies the optical characteristic of the organic thin film, whereby the organic thin film displays an image.
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公开(公告)号：EP0314484B1
公开(公告)日：1994-07-13
申请号：EP88310128.9
申请日：1988-10-27
发明人： Mizushima, Koichi c/o Patent Division , Yoshida, Jiro c/o Patent Division , Kubo, Koh-ichi c/o Patent Division
IPC分类号： H01L39/22
CPC分类号： H01L39/225 , H01L39/228 , Y10S428/93 , Y10S505/701 , Y10S505/702
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公开(公告)号：EP0215683B1
公开(公告)日：1992-08-05
申请号：EP86307206.2
申请日：1986-09-18
发明人： Gemma, Nobuhiro c/o Patent Division , Miura, Akira c/o Patent Division , Mizushima, Koichi c/o Patent Division , Azuma, Makoto c/o Patent Division , Mori, Yasushi c/o Patent Division
IPC分类号： G02F1/17
CPC分类号： H01L51/0078 , B82Y20/00 , G02F1/017 , G02F1/15 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0054 , H01L51/0055 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0068 , H01L51/0072 , H01L51/0075 , H01L51/0077 , H01L51/0083 , H01L51/0084 , H01L51/424
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公开(公告)号：EP0238759A3
公开(公告)日：1989-02-08
申请号：EP86309977.6
申请日：1986-12-19
发明人： Miura, Akira c/o Patent Division , Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Azuma, Makoto c/o Patent Division , Iwakiri, Takano c/o Patent Division
CPC分类号： G11B7/0045 , G11B7/244 , G11B7/248 , G11B7/2531
摘要： An information writing method of an optical recording device selectively irradiates light on an optical recording medium, having a thin organic film containing donor and acceptor molecules, and a pair of electrodes (2, 8) for applying a voltage to the thin organic film, in order to cause charge transfer between the donor and acceptor molecules, and records a change in optical or electric characteristics of the thin organic film by the charge transfer as information. Selective light irradiation is performed while a voltage is applied to the electrodes (2,8).
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公开(公告)号：EP0239368A3
公开(公告)日：1990-02-07
申请号：EP87302544.9
申请日：1987-03-24
发明人： Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Miura, Akira c/o Patent Division , Azuma, Makoto c/o Patent Division , Nakayama, Toshio c/o Patent Division
CPC分类号： H01L29/513 , H01L29/51
摘要： A field-effect transistor comprising a semiconductor substrate (11) having source and drain regions (12, 13) and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate (11) and the gate electrode (19). When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate (11).
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公开(公告)号：EP0239368A2
公开(公告)日：1987-09-30
申请号：EP87302544.9
申请日：1987-03-24
发明人： Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Miura, Akira c/o Patent Division , Azuma, Makoto c/o Patent Division , Nakayama, Toshio c/o Patent Division
CPC分类号： H01L29/513 , H01L29/51
摘要： A field-effect transistor comprising a semiconductor substrate (11) having source and drain regions (12, 13) and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate (11) and the gate electrode (19). When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate (11).
摘要翻译： 一种场效应晶体管，包括具有源区和漏区（12,13）和栅极（19）的半导体衬底（11），其中在半导体衬底（11）和 栅电极（19）。 当向栅电极施加预定电压时，在薄有机膜中包含的施主和受体分子之间发生电荷转移，从而控制半导体衬底（11）的表面电位。
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公开(公告)号：EP0238759A2
公开(公告)日：1987-09-30
申请号：EP86309977.6
申请日：1986-12-19
发明人： Miura, Akira c/o Patent Division , Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Azuma, Makoto c/o Patent Division , Iwakiri, Takano c/o Patent Division
CPC分类号： G11B7/0045 , G11B7/244 , G11B7/248 , G11B7/2531
摘要： An information writing method of an optical recording device selectively irradiates light on an optical recording medium, having a thin organic film containing donor and acceptor molecules, and a pair of electrodes (2, 8) for applying a voltage to the thin organic film, in order to cause charge transfer between the donor and acceptor molecules, and records a change in optical or electric characteristics of the thin organic film by the charge transfer as information. Selective light irradiation is performed while a voltage is applied to the electrodes (2,8).
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公开(公告)号：EP0239368B1
公开(公告)日：1995-03-01
申请号：EP87302544.9
申请日：1987-03-24
发明人： Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Miura, Akira c/o Patent Division , Azuma, Makoto c/o Patent Division , Nakayama, Toshio c/o Patent Division
CPC分类号： H01L29/513 , H01L29/51
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公开(公告)号：EP0238759B1
公开(公告)日：1992-03-11
申请号：EP86309977.6
申请日：1986-12-19
发明人： Miura, Akira c/o Patent Division , Gemma, Nobuhiro c/o Patent Division , Mizushima, Koichi c/o Patent Division , Azuma, Makoto c/o Patent Division , Iwakiri, Takano c/o Patent Division
CPC分类号： G11B7/0045 , G11B7/244 , G11B7/248 , G11B7/2531
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公开(公告)号：EP0314484A3
公开(公告)日：1990-04-11
申请号：EP88310128.9
申请日：1988-10-27
发明人： Mizushima, Koichi c/o Patent Division , Yoshida, Jiro c/o Patent Division , Kubo, Koh-ichi c/o Patent Division
IPC分类号： H01L39/22
CPC分类号： H01L39/225 , H01L39/228 , Y10S428/93 , Y10S505/701 , Y10S505/702
摘要： A superconductor element includes a first layer (1) of an oxide superconductor, a second layer (3) of an insulator, semiconductor, or metal, and an interlayer (2) interposed between the first and second layers and formed of AgO x (wherein 0 ≦ x ≦ 1/2).
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