发明公开
EP0272636A2 Method of manufacturing group III-V compound semiconductor solar battery
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Herstellungsverfahren einer Sonnenzelle aus III-V-Halbleiterverbindungen。
- 专利标题： Method of manufacturing group III-V compound semiconductor solar battery
- 专利标题（中）： Herstellungsverfahren einer Sonnenzelle aus III-V-Halbleiterverbindungen。
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申请号： EP87118767.0申请日： 1987-12-17
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公开(公告)号： EP0272636A2公开(公告)日： 1988-06-29
- 发明人: Yoshida, Susumu Mitsubishi Denki K. K.
- 申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 申请人地址： 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP
- 专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人地址： 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP
- 代理机构： Goddar, Heinz J., Dr.
- 优先权： JP309797/86 19861224
- 主分类号： H01L31/06
- IPC分类号： H01L31/06 ; H01L31/18
摘要：
After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution (21) is terminated, a substrate (1) is temporarily dipped in an undoped GaAs saturated or supersaturated solution (22), and thereafter liquid-phase epitaxial growth is performed by a p-type Al x Ga 1-x As saturated solution (23). Thus, the n-type GaAs saturated solution (21) is prevented from being mixed into the p-type Al x Ga 1-x As saturated solution (23) to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.
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