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    Method of manufacturing group III-V compound semiconductor solar battery
    2.
    发明公开
    Method of manufacturing group III-V compound semiconductor solar battery 失效
    Herstellungsverfahren einer Sonnenzelle aus III-V-Halbleiterverbindungen。

    公开(公告)号：EP0272636A2

    公开(公告)日：1988-06-29

    申请号：EP87118767.0

    申请日：1987-12-17

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Yoshida, Susumu Mitsubishi Denki K. K.

    IPC分类号： H01L31/06 ,  H01L31/18

    CPC分类号： H01L31/0693 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/066

    摘要： After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution (21) is terminated, a substrate (1) is temporarily dipped in an undoped GaAs saturated or supersaturated solution (22), and thereafter liquid-phase epitaxial growth is performed by a p-type Al x Ga 1-x As saturated solution (23). Thus, the n-type GaAs saturated solution (21) is prevented from being mixed into the p-type Al x Ga 1-x As saturated solution (23) to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.

    摘要翻译： 在通过n型GaAs饱和溶液（21）的液相外延生长步骤终止后，将衬底（1）暂时浸入未掺杂的GaAs饱和或过饱和溶液（22）中，然后液相外延生长为 由p型Al x Ga 1-x As饱和溶液（23）进行。 因此，防止了n型GaAs饱和溶液（21）混入p型Al x Ga 1-x As饱和溶液（23）中以使其污染，由此即使数量多 结晶次数增加。