发明公开
- 专利标题： Photoelectric conversion device
- 专利标题（中）： 光电转换装置
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申请号： EP88100331.3申请日： 1988-01-12
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公开(公告)号： EP0276683A3公开(公告)日： 1989-10-25
- 发明人: Ishioka, Sachio , Takasaki, Yukio , Hirai, Tadaaki , Tsuji, Kazutaka , Makishima, Tatsuo , Nonaka, Yasuhiko , Kawamura, Tatsuro , Yamashita, Takashi , Taketoshi, Kazuhisa , Shidara, Keiichi , Ando, Fumihiko , Tanioka, Kenkichi
- 申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： HITACHI, LTD.,NIPPON HOSO KYOKAI
- 当前专利权人： HITACHI, LTD.,NIPPON HOSO KYOKAI
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Strehl Schübel-Hopf Groening & Partner
- 优先权： JP4866/87 19870114
- 主分类号： H01L31/08
- IPC分类号： H01L31/08 ; H01L31/02 ; H01L27/14
摘要：
Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.
公开/授权文献
- EP0276683B1 Photoelectric conversion device 公开/授权日：1994-03-30
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