公开(公告)号：EP0276683B1

公开(公告)日：1994-03-30

申请号：EP88100331.3

申请日：1988-01-12

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Nonaka, Yasuhiko ,  Kawamura, Tatsuro ,  Yamashita, Takashi ,  Taketoshi, Kazuhisa ,  Shidara, Keiichi ,  Ando, Fumihiko ,  Tanioka, Kenkichi

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L27/14

CPC分类号： H01L31/095 ,  H01L31/0272

公开(公告)号：EP0255246A2

公开(公告)日：1988-02-03

申请号：EP87305906.7

申请日：1987-07-03

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Tanioka, Kenkichi ,  Shidara, Keiichi ,  Kawamura, Tatsuro ,  Yamazaki, Junichi ,  Hiruma, Eikyuu ,  Taketoshi, Kazuhisa ,  Suzuki, Shiro ,  Yamashita, Takashi ,  Kosugi, Mitsuo ,  Ikeda, Yochizumi ,  Aiba, Masaaki Honkomagome Nichome Danchi 108 ,  Hirai, Tadaaki ,  Takasaki, Yukio ,  Ishioka, Sachio ,  Makishima, Tatsuo ,  Sameshima, Kenji Hitachi Owadaryo 48-18 ,  Uda, Tsuyoshi ,  Goto, Naohiro ,  Nonaka, Yasuhiko

IPC分类号： H01J29/45 ,  H01L31/08 ,  H01L27/14

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconduc­tive layer which includes an amorphous semiconductor layer (24) capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconduc­tive device while maintaining low lag property.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层（24）。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

公开(公告)号：EP0283699B1

公开(公告)日：1994-06-15

申请号：EP88101954.1

申请日：1988-02-10

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Takasaki, Yukio ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Hirai, Tadaaki ,  Ishioka, Sachio ,  Kawamura, Tatsuro ,  Shidara, Keiichi ,  Hiruma, Eikyu ,  Tanioka, Kenkichi ,  Yamazaki, Junichi ,  Sameshima, Kenji ,  Matsubara, Hirokazu Sanhaitsu Musashino A-107 ,  Taketoshi, Kazuhisa

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L31/10

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

公开(公告)号：EP0276683A3

公开(公告)日：1989-10-25

申请号：EP88100331.3

申请日：1988-01-12

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Nonaka, Yasuhiko ,  Kawamura, Tatsuro ,  Yamashita, Takashi ,  Taketoshi, Kazuhisa ,  Shidara, Keiichi ,  Ando, Fumihiko ,  Tanioka, Kenkichi

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L27/14

CPC分类号： H01L31/095 ,  H01L31/0272

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconduc­tor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 本发明公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层（34,44,57,67），其显示电荷倍增并且将光信号（37,47,50,60）转换为电信号; 和具有用于读取电信号的电路等（32,42,56,66）（例如开关元件）的基板（31,41,51,61）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示电荷倍增作用，从而实现具有不小于1的增益的高灵敏度光电转换器件。

公开(公告)号：EP0255246A3

公开(公告)日：1989-04-26

申请号：EP87305906.7

申请日：1987-07-03

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Tanioka, Kenkichi ,  Shidara, Keiichi ,  Kawamura, Tatsuro ,  Yamazaki, Junichi ,  Hiruma, Eikyuu ,  Taketoshi, Kazuhisa ,  Suzuki, Shiro ,  Yamashita, Takashi ,  Kosugi, Mitsuo ,  Ikeda, Yochizumi ,  Aiba, Masaaki Honkomagome Nichome Danchi 108 ,  Hirai, Tadaaki ,  Takasaki, Yukio ,  Ishioka, Sachio ,  Makishima, Tatsuo ,  Sameshima, Kenji Hitachi Owadaryo 48-18 ,  Uda, Tsuyoshi ,  Goto, Naohiro ,  Nonaka, Yasuhiko

IPC分类号： H01J29/45 ,  H01L31/08 ,  H01L27/14

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconduc­tive layer which includes an amorphous semiconductor layer (24) capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconduc­tive device while maintaining low lag property.

公开(公告)号：EP0283699A2

公开(公告)日：1988-09-28

申请号：EP88101954.1

申请日：1988-02-10

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Takasaki, Yukio ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Hirai, Tadaaki ,  Ishioka, Sachio ,  Kawamura, Tatsuro ,  Shidara, Keiichi ,  Hiruma, Eikyu ,  Tanioka, Kenkichi ,  Yamazaki, Junichi ,  Sameshima, Kenji ,  Matsubara, Hirokazu Sanhaitsu Musashino A-107 ,  Taketoshi, Kazuhisa

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L31/10

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

摘要翻译： 公开了一种使用主要由至少包含氢和卤素元素的四面体元素作为半导体材料的非晶材料的光电转换装置。 当通过使用该非晶半导体形成的层施加强电场时，主要在非晶半导体的内部产生电荷倍增效应，因此可以获得具有高灵敏度的热稳定型光电转换装置，同时保持 良好的光响应。

公开(公告)号：EP0276683A2

公开(公告)日：1988-08-03

申请号：EP88100331.3

申请日：1988-01-12

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Nonaka, Yasuhiko ,  Kawamura, Tatsuro ,  Yamashita, Takashi ,  Taketoshi, Kazuhisa ,  Shidara, Keiichi ,  Ando, Fumihiko ,  Tanioka, Kenkichi

IPC分类号： H01L31/08 ,  H01L31/02 ,  H01L27/14

CPC分类号： H01L31/095 ,  H01L31/0272

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconduc­tor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层（34,44,67,67），其显示电荷倍增，并将光信号（37,47,50,60）转换为电信号; 以及具有用于读取电信号的电路等（32,42,56,66）（例如开关元件）的基板（31,41,51,61）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

公开(公告)号：EP0251647B1

公开(公告)日：1993-03-17

申请号：EP87305562.8

申请日：1987-06-23

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Shimomoto, Yasuharu ,  Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Matsubara, Hirokazu ,  Sameshima, Kenji ,  Yamazaki, Junichi ,  Tanioka, Kenkichi ,  Kosugi, Mitsuo ,  Shidara, Keiichi ,  Kawamura, Tatsuro ,  Hiruma, Eikyuu ,  Yamashita, Takashi

IPC分类号： H01J29/45 ,  H01J9/233 ,  H01L31/02

CPC分类号： H01J29/456

公开(公告)号：EP0238849B1

公开(公告)日：1992-04-29

申请号：EP87102348.7

申请日：1987-02-19

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Takasaki, Yukio ,  Makishima, Tatsuo ,  Tsuji, Kazutaka ,  Hirai, Tadaaki ,  Inoue, Eisuke ,  Nonaka, Yasuhiko ,  Goto, Naohiro ,  Yamamoto, Masanao ,  Shidara, Keiichi ,  Tanioka, Kenkichi ,  Yamashita, Takashi ,  Kawamura, Tatsuro ,  Hiruma, Eikyuu ,  Suzuki, Shirou ,  Aiba, Masaaki

IPC分类号： H01J29/45

CPC分类号： H01J29/456

公开(公告)号：EP0251647A3

公开(公告)日：1989-10-18

申请号：EP87305562.8

申请日：1987-06-23

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Shimomoto, Yasuharu ,  Ishioka, Sachio ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Tsuji, Kazutaka ,  Makishima, Tatsuo ,  Matsubara, Hirokazu ,  Sameshima, Kenji ,  Yamazaki, Junichi ,  Tanioka, Kenkichi ,  Kosugi, Mitsuo ,  Shidara, Keiichi ,  Kawamura, Tatsuro ,  Hiruma, Eikyuu ,  Yamashita, Takashi

IPC分类号： H01J29/45 ,  H01J9/233 ,  H01L31/02

CPC分类号： H01J29/456

摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film (2), an amorphous layer (4) consisting essentially of silicon containing hydrogen, and an amorphous layer (5) consisting essentially of selenium in the above order on a light-transmitting substrate (l). The selenium layer (5) prevents deterioration of the performance of the silicon layer (4) with time, while not affecting the useful properties of the silicon layer (4).