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公开(公告)号：EP0381189B1
公开(公告)日：1997-07-16
申请号：EP90101907.5
申请日：1990-01-31
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
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公开(公告)号：EP0283699B1
公开(公告)日：1994-06-15
申请号：EP88101954.1
申请日：1988-02-10
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Takasaki, Yukio , Tsuji, Kazutaka , Makishima, Tatsuo , Hirai, Tadaaki , Ishioka, Sachio , Kawamura, Tatsuro , Shidara, Keiichi , Hiruma, Eikyu , Tanioka, Kenkichi , Yamazaki, Junichi , Sameshima, Kenji , Matsubara, Hirokazu Sanhaitsu Musashino A-107 , Taketoshi, Kazuhisa
CPC分类号： H01L31/095 , H01L31/03765 , H01L31/107 , H01L31/204 , Y02E10/548 , Y02P70/521
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公开(公告)号：EP0381189A3
公开(公告)日：1991-07-24
申请号：EP90101907.5
申请日：1990-01-31
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Hirai, Tadaaki , Ogawa, Hirofumi , Sameshima, Kenji , Takasaki, Yukio , Unnai, Takaaki , Yamazaki, Junichi , Kubota, Misao , Tanioka, Kenkichi , Hiruma, Eikyu
摘要： An image pick-up apparatus is disclosed which includes a target portion (101, 102, 103) having a photoconductive film (103) on a substrate (101) and a target electrode (102) and reads video information converted into an electric signal in the photoconductive film (103) by an electron beam. An insulating region (104) is provided for the target portion (101, 102, 103) such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion (101, 102, 103).
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公开(公告)号：EP0276683A3
公开(公告)日：1989-10-25
申请号：EP88100331.3
申请日：1988-01-12
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Ishioka, Sachio , Takasaki, Yukio , Hirai, Tadaaki , Tsuji, Kazutaka , Makishima, Tatsuo , Nonaka, Yasuhiko , Kawamura, Tatsuro , Yamashita, Takashi , Taketoshi, Kazuhisa , Shidara, Keiichi , Ando, Fumihiko , Tanioka, Kenkichi
CPC分类号： H01L31/095 , H01L31/0272
摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.
摘要翻译： 本发明公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层（34,44,57,67），其显示电荷倍增并且将光信号（37,47,50,60）转换为电信号; 和具有用于读取电信号的电路等（32,42,56,66）（例如开关元件）的基板（31,41,51,61）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示电荷倍增作用，从而实现具有不小于1的增益的高灵敏度光电转换器件。
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公开(公告)号：EP0248426B1
公开(公告)日：1994-09-07
申请号：EP87108095.8
申请日：1987-06-04
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
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公开(公告)号：EP0600476A2
公开(公告)日：1994-06-08
申请号：EP93119392.4
申请日：1993-12-01
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Yamagishi, Toshio , Nanba, Masakazu , Egami, Norifumi , Tanioka, Kenkichi , Kurashige, Mitsuhiro , Tsuji, Kazutaka , Kaneko, Yoshiyuki , Mikishima, Tatsuo , Nagatsuma, Kazuuyuki , Ohshima, Tetsuya , Nakano, Yasushi
摘要： A photoconductive target having a transparent electrode (102) and a photoconductive layer (103) on a transparent substrate (101) is disposed opposite to a plurality of integrated electron emitters having electron emitters (106) and gate electrodes (104). A plurality of electron emitters applying electron beams to the photoconductive target are temporally changed over by an electron emitter selector circuit (107) and a gate selector circuit (108). Thereby, signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.
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公开(公告)号：EP0276683B1
公开(公告)日：1994-03-30
申请号：EP88100331.3
申请日：1988-01-12
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Ishioka, Sachio , Takasaki, Yukio , Hirai, Tadaaki , Tsuji, Kazutaka , Makishima, Tatsuo , Nonaka, Yasuhiko , Kawamura, Tatsuro , Yamashita, Takashi , Taketoshi, Kazuhisa , Shidara, Keiichi , Ando, Fumihiko , Tanioka, Kenkichi
CPC分类号： H01L31/095 , H01L31/0272
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公开(公告)号：EP0381189A2
公开(公告)日：1990-08-08
申请号：EP90101907.5
申请日：1990-01-31
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Hirai, Tadaaki , Ogawa, Hirofumi , Sameshima, Kenji , Takasaki, Yukio , Unnai, Takaaki , Yamazaki, Junichi , Kubota, Misao , Tanioka, Kenkichi , Hiruma, Eikyu
摘要： An image pick-up apparatus is disclosed which includes a target portion (101, 102, 103) having a photoconductive film (103) on a substrate (101) and a target electrode (102) and reads video information converted into an electric signal in the photoconductive film (103) by an electron beam. An insulating region (104) is provided for the target portion (101, 102, 103) such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion (101, 102, 103).
摘要翻译： 公开了一种图像拾取装置，其包括在基板（101）上具有光电导膜（103）的目标部分（101,102,103）和目标电极（102），并且读取转换成电信号的视频信息 光电导膜（103）。 为目标部分（101,102,103）提供绝缘区域（104），使得在无效扫描区域（对应于未被电子束扫描的区域的目标区域）上生成的载体不会出现在 目标部分（101,102,103）。
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公开(公告)号：EP0255246A2
公开(公告)日：1988-02-03
申请号：EP87305906.7
申请日：1987-07-03
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Tanioka, Kenkichi , Shidara, Keiichi , Kawamura, Tatsuro , Yamazaki, Junichi , Hiruma, Eikyuu , Taketoshi, Kazuhisa , Suzuki, Shiro , Yamashita, Takashi , Kosugi, Mitsuo , Ikeda, Yochizumi , Aiba, Masaaki Honkomagome Nichome Danchi 108 , Hirai, Tadaaki , Takasaki, Yukio , Ishioka, Sachio , Makishima, Tatsuo , Sameshima, Kenji Hitachi Owadaryo 48-18 , Uda, Tsuyoshi , Goto, Naohiro , Nonaka, Yasuhiko
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer (24) capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层（24）。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。
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公开(公告)号：EP0067015A2
公开(公告)日：1982-12-15
申请号：EP82302745.3
申请日：1982-05-27
申请人： Hitachi, Ltd. , NIPPON HOSO KYOKAI
发明人： Shidara, Keiichi , Tanioka, Kenkichi , Uchida, Teruo , Kusano, Chushirou , Takasaki, Yukio , Nonaka, Yasuhiko , Inoue, Eisuke
IPC分类号： H01J29/36
CPC分类号： H01L31/08 , H01J29/456
摘要： A photoconductive film comprises a photoconductive layer (3) which is mainly made of selenium and has a region (b) in the thickness direction containing tellurium. At least one of (i) a portion in a direction of hole flow of said region (b) and (ii) a portion in the hole flow direction of another region (c) which is located adjacent to said region (b) is doped with at least one member selected from oxides, fluorides and elements which belong to groups II, III and VII, which are capable of forming negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such dopants include CuO, In 2 O 3 , Se0 2 , V 2 0 5 , MoO 3 , WOa, GaF 2 , InF 3 , Zn, Ga, In, Cl, I and Br. The "after image" characteristic ascribable to incident light of high intensity can be significantly improved.
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