在一个可控功率半导体元件，其由多个相邻设置的，并联连接的单独的元件的，所述控制触点连接到共同的控制端子，所述控制端子和控制触点之间的不同线路电阻被补偿，以实现所有的单个元件的均匀加载。 在栅极触点之间的p型基极（3）补偿栅极沟槽电阻器（RG）的设置优选地由（5）和n型发射极（2），用于一个GTO可控硅来实现。 用于此目的的可以是电有效栅极间距（XG），例如通过足够厚的绝缘层（6）或改变相应的金属化的蚀刻掩模的P - 型基极（3）也不同厚度形成，或者不同的掺杂分布装置更重掺杂的附加层 （7）。

In the case of a controllable power semiconductor component, which consists of a plurality of adjacently arranged, parallel-connected individual elements, the control contacts are connected to a common control terminal, different line resistances between the control terminal and the control contacts to be compensated in order to achieve uniform loading of all the individual elements. in a GTO thyristor, the compensation over an adjustment of the gate trench-resistor (RG) in the p-type base (3) between the gate contact is preferably achieved (5) and n-type emitter (2). To this end, one can the electrically active gate spacing (X _g), for example, by a sufficiently thick insulating layer (6) or a corresponding metallization etching mask change - The p-type base (3) can also be formed with different thicknesses or a different doping profile means more doped additional layers (7).