On a IC where the wiring layer (21) is formed of supercon­ductive material, an electrode (23) formed of normal metals, i. e. non-superconductive metals, such as aluminum, connects a part of semiconductor region (4) via a barrier metal, such as TiN, to the superconductive layer (21) wiring at least at the superconductive layer (21) wiring's side wall which is essentially orthogonal to the layer wiring. Accordingly, even when the wiring layer (21) is anisotro­pically superconductive mainly in direction parallel to the plane of the deposition, the superconductive property is fully enjoyed while the copper atoms in the supercon­ductive material and the silicon atoms in the semiconductor region (4) of the IC do not produce undesirable alloy, resulting in improved reliability of the IC operation, i. e. the semiconductor material as well as the supercon­ductive material is not deteriorated.