发明公开
- 专利标题： High-speed dielectrically isolated devices utilizing buried silicide regions and fabrication thereof
- 专利标题（中）： 在高速，埋硅化物区域，其制备方法介质隔离装置。
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申请号： EP89302763.1申请日： 1989-03-21
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公开(公告)号： EP0335557A2公开(公告)日： 1989-10-04
- 发明人: Easter, William Graham , Feygenson, Anatoly
- 申请人： AT&T Corp.
- 申请人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 专利权人： AT&T Corp.
- 当前专利权人： AT&T Corp.
- 当前专利权人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 代理机构： Watts, Christopher Malcolm Kelway, Dr.
- 优先权： US175016 19880330
- 主分类号： H01L21/74
- IPC分类号： H01L21/74 ; H01L21/76 ; H01L29/72 ; H01L29/78 ; H01L21/225
摘要：
A dielectrically-isolated structure and method of fabricating the same is disclosed wherein the structure includes a layer of silicide (20) which is selectively doped, preferably using an ion implantation process. The doped silicide is then used as the diffusion source for the subsequent formation (through a heat treatment) of various active portions (collector, emitter, drain, source, for example) of a variety of high-voltage, high-speed active devices. The non-doped silicide is advantageously utilized as a low-resistance contact between the buried diffusion region and the surface electrode.
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