发明公开
- 专利标题: Speed enhancement technique for CMOS circuits
- 专利标题(中): CMOS电路的速度增强技术
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申请号: EP89110915.9申请日: 1989-06-16
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公开(公告)号: EP0347759A3公开(公告)日: 1990-04-18
- 发明人: Proebsting, Robert J.
- 申请人: NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址: 2900 Semiconductor Drive P.O. Box 58090 Santa Clara California 95051-8090 US
- 专利权人: NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人: NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址: 2900 Semiconductor Drive P.O. Box 58090 Santa Clara California 95051-8090 US
- 代理机构: Sparing - Röhl - Henseler Patentanwälte
- 优先权: US210969 19880624
- 主分类号: H03K19/017
- IPC分类号: H03K19/017
摘要:
A speed enhancement technique for CMOS circuits is disclosed. In the series of logic stages, nodes in the signal path of a pulse are set by preceding logic stages, then reset by feedback from a subsequent logic stage. This eliminates the capacitive burden of resetting any given node from the input signal to allow substantially all of the input signal to be employed in setting the nodes to an active state rather than wasting half the signal in turning off the reset path. The technique is illustrated as applied to RAM circuits.
公开/授权文献
- EP0347759B1 Speed enhancement technique for CMOS circuits 公开/授权日:1994-08-10
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