发明公开
- 专利标题： Thin film phototransistor and photosensor array using the same
- 专利标题（中）： 使用相同的薄膜光电传感器和光电传感器阵列
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申请号： EP89118067.1申请日： 1989-09-29
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公开(公告)号： EP0361515A3公开(公告)日： 1990-10-31
- 发明人: Tsukada, Toshihisa , Kaneko, Yoshiyuki , Yamamoto, Hideaki , Koike, Norio , Tsutsui, Ken , Matsumaru, Haruo , Tanaka, Yasuo
- 申请人： HITACHI, LTD.
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101 JP
- 代理机构： Strehl Schübel-Hopf Groening & Partner
- 优先权： JP35068/89 19890216; JP244167/88 19880930; JP66126/89 19890320; JP29793/89 19890210; JP63583/89 19890317
- 主分类号： H01L31/113
- IPC分类号： H01L31/113 ; H01L27/146
摘要：
A thin film phototransistor comprises a source electrode (6), a drain electrode (7), a gate electrode '(2), a gate insulating film (3), and a semiconductor layer (4), having no overlapped region between the. gate electrode (2) and the source electrode (6) and/or between the gate electrode (2) and the drain electrode (7). Such a phototransistor has (1) a function as a photosensor and a switching function, (2) a high input impedance, (3) a voltage control function, and (4) a high photocurrent ON / OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.
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