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58 条记录 (耗时 0.018 秒)

    A small memory unit with a hard disk
    1.
    发明公开
    A small memory unit with a hard disk 失效
    小的存储单元硬盘。

    公开(公告)号：EP0671741A2

    公开(公告)日：1995-09-13

    申请号：EP95103277.0

    申请日：1995-03-07

    申请人： HITACHI, LTD.

    发明人： Akagi, Kyo ,  Tsukada, Toshihisa ,  Shiroishi, Yoshihiro

    IPC分类号： G11B25/04

    CPC分类号： G11B25/043

    摘要： A magnetic disk unit of form factor size with a low power consumption, a short average seek time and a high performance. The unit includes at least two spindles (3', 4') for supporting and rotating magnetic disks. Specifically, two 1.3-inch disks (3, 4), three 1.0-inch disks (5, 6, 7) or four 0.7-inch disks (8, 9, 10, 11) are arranged in a housing (1) originally intended for a 1.8-inch magnetic disk. The unit further includes a device for writing and reading information while selecting a spindle. The card-type disk unit thus can be reduced in thickness, with a smaller power consumption for starting the disk rotation and further with an improved average seek velocity.

    Thin film phototransistor and photosensor array using the same
    3.
    发明公开
    Thin film phototransistor and photosensor array using the same 失效
    Dünnschicht-Phototransistor und solche Phototransistoren anwendende Photosensoranordnung。

    公开(公告)号：EP0361515A2

    公开(公告)日：1990-04-04

    申请号：EP89118067.1

    申请日：1989-09-29

    申请人： HITACHI, LTD.

    发明人： Tsukada, Toshihisa ,  Kaneko, Yoshiyuki ,  Yamamoto, Hideaki ,  Koike, Norio ,  Tsutsui, Ken ,  Matsumaru, Haruo ,  Tanaka, Yasuo

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H04N1/02805 ,  H01L27/14643 ,  H01L31/1136 ,  H04N1/0313 ,  H04N1/0316

    摘要： A thin film phototransistor comprises a source electrode (6), a drain electrode (7), a gate electrode '(2), a gate insulating film (3), and a semiconductor layer (4), having no overlapped region between the. gate electrode (2) and the source electrode (6) and/or between the gate electrode (2) and the drain electrode (7). Such a phototransistor has (1) a function as a photosensor and a switching function, (2) a high input impedance, (3) a voltage control function, and (4) a high photocurrent ON / OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

    摘要翻译： 薄膜光电晶体管包括源电极（6），漏电极（7），栅极电极（2），栅极绝缘膜（3）和半导体层（4）。 栅电极（2）和源电极（6）和/或栅电极（2）和漏电极（7）之间。 这种光电晶体管具有（1）作为光传感器和开关功能的功能，（2）高输入阻抗，（3）电压控制功能，以及（4）高光电流开/关比。 该薄膜光电晶体管可以单独使用或与薄膜晶体管一起使用于一维或二维光电传感器阵列的图像元素，产生令人满意的结果。

    Semiconductor device having a floating gate
    5.
    发明公开
    Semiconductor device having a floating gate 失效
    Halbleiter Anordnung mit schwimmender Gate。

    公开(公告)号：EP0298430A2

    公开(公告)日：1989-01-11

    申请号：EP88110725.4

    申请日：1988-07-05

    申请人： HITACHI, LTD.

    发明人： Kume, Hitoshi ,  Yamamoto, Hideaki ,  Tsukada, Toshihisa ,  Kamigaki, Yoshiaki ,  Adachi, Tetsuo ,  Kure, Tokuo

    IPC分类号： H01L29/00 ,  H01L29/78 ,  H01L27/10

    CPC分类号： H01L29/78612 ,  H01L29/7883

    摘要： In a semiconductor device having a floating gate electrode (16), an electric field to be applied to a gate oxide film (14) is locally modulated in a region where the floating gate electrode (16) overlaps a drain or source region (21). The device of the present invention is well suited for application as a nonvolatile memory cell, and it exhibits a slight leakage current in an erase operation and has a high immunity against the drain disturb phenomenon.

    摘要翻译： 在具有浮置栅极（16）的半导体器件中，施加到栅极氧化膜（14）的电场在浮置栅电极（16）与漏极或源极区域（21）重叠的区域中被局部调制， 。 本发明的器件非常适合作为非易失性存储单元的应用，并且在擦除操作中表现出轻微的漏电流，并且具有对漏泄扰现象的高抗扰性。

    Liquid crystal display device and method of driving the same
    6.
    发明公开
    Liquid crystal display device and method of driving the same 失效
    Flüssigkristallanzeigeeinrichtungund Steuerungsverfahrendafür。

    公开(公告)号：EP0288011A2

    公开(公告)日：1988-10-26

    申请号：EP88106229.3

    申请日：1988-04-19

    申请人： HITACHI, LTD.

    发明人： Tsukada, Toshihisa ,  Kaneko, Yoshiyuki ,  Sasano, Akira

    IPC分类号： G09G3/36 ,  G02F1/133

    CPC分类号： G02F1/136213 ,  G09G3/3648 ,  G09G3/3659 ,  G09G2300/043 ,  G09G2320/0204 ,  G09G2320/0219 ,  G09G2320/0247

    摘要： A liquid crystal display panel and a method of driving the display panel are disclosed. The display panel and the driving method can reduce the leakage of a gate driving voltage to a first pixel electrode (9) due to the parasitic capacitance of a thin field transistor (4), and can lessen an adverse effect of noise which is generated at a second pixel electrode by cancelling out the capacitive coupling to the first pixel electrode, on an image displayed by the display panel.

    摘要翻译： 公开了一种液晶显示面板和驱动显示面板的方法。 显示面板和驱动方法可以减少由于薄场晶体管（4）的寄生电容而导致的栅极驱动电压对第一像素电极（9）的泄漏，并且可以减少在 通过在由显示面板显示的图像上消除与第一像素电极的电容耦合的第二像素电极。

    Thin film transistor and method of making the same
    8.
    发明公开
    Thin film transistor and method of making the same 失效
    Dünnfilmtransistor和Verfahren zur Herstellung。

    公开(公告)号：EP0156647A2

    公开(公告)日：1985-10-02

    申请号：EP85302159.0

    申请日：1985-03-28

    申请人： HITACHI, LTD.

    发明人： Tsukada, Toshihisa ,  Nakano, Toshio ,  Sasano, Akira ,  Seki, Koichi

    IPC分类号： H01L29/62 ,  H01L29/72 ,  H01L29/80

    CPC分类号： H01L29/80 ,  H01L29/1604 ,  H01L29/42304 ,  H01L29/7317 ,  H01L29/7606 ,  H01L29/7722

    摘要： @ A thin film transistor has a layer (15) formed by the interfacial reaction between amorphous silicon and metal, which is used as a central or base electrode (15,11). The base electrode (15, 11) is in the shape of stripes or a flat surface. The base electrode (15, 11) is sandwiched between the emitter (4, 5, 14, 10) and collector (4, 5, 6, 12) of the transistor, which may each consist of an n-type hydrogenated amorphous silicon layer (5) and an intrinsic hydrogenated amorphous silicon layer (4), with the intrinsic hydrogenated amorphous silicon layer (4) being close to the base electrode (15, 11). There may be p-type hydrogenated amorphous silicon layers between the base electrode (15, 11) and the intrinsic hydrogenated amorphous silicon layer.

    摘要翻译： 薄膜晶体管具有由非晶硅和金属之间的界面反应形成的层（15），其用作中心或基极（15,11）。 基极（15,11）为条状或平坦的形状。 基极（15,11）夹在晶体管的发射极（4,5,10,10）和集电极（4,5,6,12）之间，每一个可以由n型氢化非晶硅层 （5）和本征氢化非晶硅层（4），其中本征氢化非晶硅层（4）靠近基极（15,11）。 在基极（15,11）和本征氢化非晶硅层之间可以存在p型氢化非晶硅层。

    Photosensor
    9.
    发明公开
    Photosensor 失效
    光传感器

    公开(公告)号：EP0075858A3

    公开(公告)日：1983-11-16

    申请号：EP82108778

    申请日：1982-09-22

    申请人： Nippon Telegraph and Telephone Public Corporation ,  Hitachi, Ltd.

    发明人： Yamamoto, Hideaki ,  Baji, Toru ,  Tsukada, Toshihisa ,  Sasano, Akira

    IPC分类号： H01L27/14 ,  H04N01/028

    CPC分类号： H01L27/14643 ,  H04N1/40056 ,  H04N5/361 ,  H04N5/3692

    摘要： A photosensor comprises a first conductive layer (8) formed on a given substrate (7), a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode (Dp) and a blocking diode (D B ) connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer (11) for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer (11') for connecting together, at the other end, corresponding with picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material (10). Dispersion of outputs from the respective unit picture elements can be minimized.