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    Thin film phototransistor and photosensor array using the same
    1.
    发明公开
    Thin film phototransistor and photosensor array using the same 失效
    Dünnschicht-Phototransistor und solche Phototransistoren anwendende Photosensoranordnung。

    公开(公告)号：EP0361515A2

    公开(公告)日：1990-04-04

    申请号：EP89118067.1

    申请日：1989-09-29

    申请人： HITACHI, LTD.

    发明人： Tsukada, Toshihisa ,  Kaneko, Yoshiyuki ,  Yamamoto, Hideaki ,  Koike, Norio ,  Tsutsui, Ken ,  Matsumaru, Haruo ,  Tanaka, Yasuo

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H04N1/02805 ,  H01L27/14643 ,  H01L31/1136 ,  H04N1/0313 ,  H04N1/0316

    摘要： A thin film phototransistor comprises a source electrode (6), a drain electrode (7), a gate electrode '(2), a gate insulating film (3), and a semiconductor layer (4), having no overlapped region between the. gate electrode (2) and the source electrode (6) and/or between the gate electrode (2) and the drain electrode (7). Such a phototransistor has (1) a function as a photosensor and a switching function, (2) a high input impedance, (3) a voltage control function, and (4) a high photocurrent ON / OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

    摘要翻译： 薄膜光电晶体管包括源电极（6），漏电极（7），栅极电极（2），栅极绝缘膜（3）和半导体层（4）。 栅电极（2）和源电极（6）和/或栅电极（2）和漏电极（7）之间。 这种光电晶体管具有（1）作为光传感器和开关功能的功能，（2）高输入阻抗，（3）电压控制功能，以及（4）高光电流开/关比。 该薄膜光电晶体管可以单独使用或与薄膜晶体管一起使用于一维或二维光电传感器阵列的图像元素，产生令人满意的结果。

    Method of producing color filters and image pick-up devices using them
    4.
    发明公开
    Method of producing color filters and image pick-up devices using them 失效
    一种用于生产滤色器和图像记录设备为它的应用程序。

    公开(公告)号：EP0048592A1

    公开(公告)日：1982-03-31

    申请号：EP81304256.1

    申请日：1981-09-16

    申请人： Hitachi, Ltd.

    发明人： Nakano, Toshio ,  Taniguchi, Yoshio ,  Tsutsui, Ken ,  Sasano, Akira ,  Kaneko, Tadao ,  Izumi, Akiya ,  Hashimoto, Michiaki

    IPC分类号： G03C7/12 ,  G02B5/20

    CPC分类号： G03F7/0007

    摘要： Disclosed is a method of producing color filters, which comprises forming a layer of an organic polymeric material having a predetermined light-sensitive characteristic on a substrate (21) exposing this layer to a predetermined pattern, developing the exposed layer to form a filter base (24) and dyeing the filter base (24), wherein after the development of the exposed layer, the layer is wetted with a dehydrating agent (25) to remove water from the filter base (24). By this dehydrating treatment, the filter base (24) can be produced without distortion to a very high precision. The dehydrating agent (25) can be an anhydrous or water-diluted alcohol, such as methanol.

    Solid state color imager and method of manufacturing the same
    7.
    发明公开
    Solid state color imager and method of manufacturing the same 失效
    Festkörper-Farbbildaufnahmevorrichtung und Verfahren zu deren Herstellung。

    公开(公告)号：EP0030476A1

    公开(公告)日：1981-06-17

    申请号：EP80304441.1

    申请日：1980-12-09

    申请人： Hitachi, Ltd.

    发明人： Sasano, Akira ,  Nakano, Toshio ,  Tsutsui, Ken ,  Hashimoto, Michiaki ,  Kaneko, Tadao ,  Taniguchi, Yoshio ,  Matsumaru, Haruo ,  Izumi, Akiya

    IPC分类号： H01L31/02 ,  H01L27/14

    CPC分类号： H01L27/14667 ,  H01L27/14621 ,  H01L27/14645

    摘要： A plurality of color filters (1, 2) are disposed on a semiconductor body for a solid-state imager including a plurality of photosensitive regions (5, 6, 7), and a filter of a third color is constructed by the overlapping between the filter members (1, 2) of a first color and a second color. The filter members are formed by a photographic exposure process. One of the filter members (1) which has a spectral transmittance substantially transmitting the light used for the exposure for use in forming the filter members (1, 2) is arranged as a lower layer closer to a substrate of the semiconductor body. When the upper filter (2) is formed, therefore, the lower filter (1) has no substantial effect on the exposure light reflected from the semiconductor body, giving a better spectral characteristic to the upper filter.

    摘要翻译： 多个滤色器（1,2）设置在包括多个感光区域（5,6,7）的固态成像器的半导体本体上，并且第三颜色的滤光器通过 第一颜色和第二颜色的过滤器构件（1,2）。 过滤器构件通过照相曝光工艺形成。 将具有基本上透射用于形成滤光器部件（1,2）的曝光用的光的光谱透射率的滤光片部件（1）配置为靠近半导体本体的基板的下层。 因此，当形成上部滤波器（2）时，下部滤波器（1）对从半导体主体反射的曝光光没有实质的影响，给上滤波器提供更好的频谱特性。