发明公开
EP0364101A2 Method of forming weak-link Josephson junction, and superconducting device employing the junction
失效
形成使用这种转变的弱耦合的约瑟夫逊结和超导器件的方法。
- 专利标题: Method of forming weak-link Josephson junction, and superconducting device employing the junction
- 专利标题(中): 形成使用这种转变的弱耦合的约瑟夫逊结和超导器件的方法。
-
申请号: EP89309231.2申请日: 1989-09-12
-
公开(公告)号: EP0364101A2公开(公告)日: 1990-04-18
- 发明人: Takagi, Kazumasa , Madokoro, Yuuichi , Fukazawa, Tokuumi , Miyauchi, Katsuki , Kawanami, Yoshimi , Aida, Toshiyuki , Honda, Yukio , Futamoto, Masaaki , Hiratani, Masahiko
- 申请人: HITACHI, LTD.
- 申请人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 当前专利权人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构: Calderbank, Thomas Roger
- 优先权: JP228686/88 19880914; JP261492/88 19881019; JP228687/88 19880914
- 主分类号: H01L39/22
- IPC分类号: H01L39/22 ; H01L39/24
摘要:
To form a weak-link Josephson junction of the type employing a thin film of an oxide superconductor, a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary (45) is formed by a method in which atoms of different species are deposited on a predetermined part (42) of the surface of a substrate (40) the predetermined part of the surface of a substrate (40) is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate (40). Then a superconducting thin film (44) is epitaxially grown on the substrate (43). Alternatively the predetermined part of the superconducting thin film (44) epitaxially grown on a substrate (43) is diffused with atoms of different species hampering a superconducting or the predetermined part of the superconductivity thin film (44) is disturbed, the superconducting thin film (44) is then annealed,
Also. a superconducting device employing the weak-link junction is disclosed.
Also. a superconducting device employing the weak-link junction is disclosed.
公开/授权文献
信息查询
IPC分类: