Superconducting device
    3.
    发明公开
    Superconducting device 失效
    超导设备

    公开(公告)号:EP0380128A3

    公开(公告)日:1990-09-19

    申请号:EP90101602.2

    申请日:1990-01-26

    申请人: HITACHI, LTD.

    IPC分类号: H01L39/12 H01L39/22

    摘要: A superconducting structure is formed in such a manner that at least an insulating layer (30) is sandwiched between two superconductor layers (10, 20) but the superconductor layers are electrically coupled with each other, and a superconducting device including the superconducting structure is constructed so as to perform a switching operation for an electric signal, to detect a light signal, and to detect the intensity of a magnetic field. Another superconducting device is formed so that two superconductor layers (3, 12) are put in direct contact with each other, and a tunnel current between the superconductor layers can be controlled. Further, a superconductor structure is formed which includes a plurality of superconductor layers and has a superconducting transition temperature or super­conducting critical current higher than that of each superconductor layer, and a superconducting device including this superconducting structure can operate at a relatively high temperature. Furthermore, a superconducting circuit device is formed which can emit a coherent electromagnetic wave having a wavelength of the order of 10 µm on the basis of the difference in energy gap between adjacent superconductor layers (22, 23). Additionally, novel oxide superconductor materials are disclosed.

    摘要翻译: 超导结构以这样的方式形成,即至少绝缘层(30)夹在两个超导体层(10,20)之间,但超导体层彼此电耦合,并且构造包括该超导结构的超导装置 从而执行电信号的切换操作,检测光信号,并检测磁场的强度。 另一个超导器件形成为使得两个超导体层(3,12)彼此直接接触,并且可以控制超导体层之间的隧道电流。 此外,形成包括多个超导体层并且具有比每个超导体层的超导转变温度或超导临界电流更高的超导体结构的超导体结构,并且包含该超导结构体的超导装置可以在相对高的温度下操作。 此外,形成超导电路装置,其能够基于相邻超导体层(22,23)之间的能隙差异发射具有10μm量级的波长的相干电磁波。 另外,公开了新颖的氧化物超导体材料。

    Superconducting device
    4.
    发明公开
    Superconducting device 失效
    Sup。。

    公开(公告)号:EP0380128A2

    公开(公告)日:1990-08-01

    申请号:EP90101602.2

    申请日:1990-01-26

    申请人: HITACHI, LTD.

    IPC分类号: H01L39/12 H01L39/22

    摘要: A superconducting structure is formed in such a manner that at least an insulating layer (30) is sandwiched between two superconductor layers (10, 20) but the superconductor layers are electrically coupled with each other, and a superconducting device including the superconducting structure is constructed so as to perform a switching operation for an electric signal, to detect a light signal, and to detect the intensity of a magnetic field. Another superconducting device is formed so that two superconductor layers (3, 12) are put in direct contact with each other, and a tunnel current between the superconductor layers can be controlled. Further, a superconductor structure is formed which includes a plurality of superconductor layers and has a superconducting transition temperature or super­conducting critical current higher than that of each superconductor layer, and a superconducting device including this superconducting structure can operate at a relatively high temperature. Furthermore, a superconducting circuit device is formed which can emit a coherent electromagnetic wave having a wavelength of the order of 10 µm on the basis of the difference in energy gap between adjacent superconductor layers (22, 23). Additionally, novel oxide superconductor materials are disclosed.

    摘要翻译: 形成超导结构,使得至少绝缘层(30)夹在两个超导体层(10,20)之间,但是超导体层彼此电耦合,并且构造包括超导结构的超导装置 以执行电信号的切换操作,检测光信号,并检测磁场的强度。 形成另一个超导装置,使得两个超导体层(3,12)彼此直接接触,并且可以控制超导体层之间的隧道电流。 此外,形成包括多个超导体层并且具有高于每个超导体层的超导转变温度或超导临界电流的超导体结构,并且包括该超导结构的超导装置可以在较高的温度下工作。 此外,形成能够基于相邻的超导体层(22,23)之间的能隙的差异,发射波长为10μm左右的相干电磁波的超导电路装置。 另外,公开了新的氧化物超导体材料。

    Method of forming weak-link Josephson junction, and superconducting device employing the junction
    5.
    发明公开
    Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效
    形成使用这种转变的弱耦合的约瑟夫逊结和超导器件的方法。

    公开(公告)号:EP0364101A2

    公开(公告)日:1990-04-18

    申请号:EP89309231.2

    申请日:1989-09-12

    申请人: HITACHI, LTD.

    IPC分类号: H01L39/22 H01L39/24

    摘要: To form a weak-link Josephson junction of the type employing a thin film of an oxide superconductor, a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary (45) is formed by a method in which atoms of different species are deposited on a predetermined part (42) of the surface of a substrate (40) the predetermined part of the surface of a substrate (40) is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate (40). Then a superconducting thin film (44) is epitaxially grown on the substrate (43). Alternatively the predetermined part of the superconducting thin film (44) epitaxially grown on a substrate (43) is diffused with atoms of different species hampering a superconducting or the predetermined part of the superconductivity thin film (44) is disturbed, the superconducting thin film (44) is then annealed,
    Also. a superconducting device employing the weak-link junction is disclosed.

    摘要翻译: 为了形成型采用氧化物超导体薄膜的弱连接的约瑟夫逊结,晶粒边界产生的反射人工晶体缺陷被用作弱连接结。 晶界(45)是由在不同种类的哪个原子的方法形成沉积在基片的表面(40)一个基片的表面(40)的预定部分的预定部分(42)是不安 不同晶面取向的,或部分在基片(40)的表面上形成。 然后超导薄膜(44)被外延生长在衬底上(43)。 可替换地,超导薄膜(44)外延生长在一个基板(43)的预定部分与不同物种妨碍超导或超导薄膜的预定部分的原子扩散的(44)被打乱,超导薄膜( 44)然后退火,从而。 超导器件用人弱连接结游离缺失盘。