摘要:
To form a weak-link Josephson junction of the type employing a thin film of an oxide superconductor, a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary (45) is formed by a method in which atoms of different species are deposited on a predetermined part (42) of the surface of a substrate (40) the predetermined part of the surface of a substrate (40) is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate (40). Then a superconducting thin film (44) is epitaxially grown on the substrate (43). Alternatively the predetermined part of the superconducting thin film (44) epitaxially grown on a substrate (43) is diffused with atoms of different species hampering a superconducting or the predetermined part of the superconductivity thin film (44) is disturbed, the superconducting thin film (44) is then annealed, Also. a superconducting device employing the weak-link junction is disclosed.
摘要:
A superconducting structure is formed in such a manner that at least an insulating layer (30) is sandwiched between two superconductor layers (10, 20) but the superconductor layers are electrically coupled with each other, and a superconducting device including the superconducting structure is constructed so as to perform a switching operation for an electric signal, to detect a light signal, and to detect the intensity of a magnetic field. Another superconducting device is formed so that two superconductor layers (3, 12) are put in direct contact with each other, and a tunnel current between the superconductor layers can be controlled. Further, a superconductor structure is formed which includes a plurality of superconductor layers and has a superconducting transition temperature or superconducting critical current higher than that of each superconductor layer, and a superconducting device including this superconducting structure can operate at a relatively high temperature. Furthermore, a superconducting circuit device is formed which can emit a coherent electromagnetic wave having a wavelength of the order of 10 µm on the basis of the difference in energy gap between adjacent superconductor layers (22, 23). Additionally, novel oxide superconductor materials are disclosed.
摘要:
A superconducting structure is formed in such a manner that at least an insulating layer (30) is sandwiched between two superconductor layers (10, 20) but the superconductor layers are electrically coupled with each other, and a superconducting device including the superconducting structure is constructed so as to perform a switching operation for an electric signal, to detect a light signal, and to detect the intensity of a magnetic field. Another superconducting device is formed so that two superconductor layers (3, 12) are put in direct contact with each other, and a tunnel current between the superconductor layers can be controlled. Further, a superconductor structure is formed which includes a plurality of superconductor layers and has a superconducting transition temperature or superconducting critical current higher than that of each superconductor layer, and a superconducting device including this superconducting structure can operate at a relatively high temperature. Furthermore, a superconducting circuit device is formed which can emit a coherent electromagnetic wave having a wavelength of the order of 10 µm on the basis of the difference in energy gap between adjacent superconductor layers (22, 23). Additionally, novel oxide superconductor materials are disclosed.
摘要:
To form a weak-link Josephson junction of the type employing a thin film of an oxide superconductor, a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary (45) is formed by a method in which atoms of different species are deposited on a predetermined part (42) of the surface of a substrate (40) the predetermined part of the surface of a substrate (40) is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate (40). Then a superconducting thin film (44) is epitaxially grown on the substrate (43). Alternatively the predetermined part of the superconducting thin film (44) epitaxially grown on a substrate (43) is diffused with atoms of different species hampering a superconducting or the predetermined part of the superconductivity thin film (44) is disturbed, the superconducting thin film (44) is then annealed, Also. a superconducting device employing the weak-link junction is disclosed.