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    Method of forming weak-link Josephson junction, and superconducting device employing the junction
    3.
    发明公开
    Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效
    形成使用这种转变的弱耦合的约瑟夫逊结和超导器件的方法。

    公开(公告)号：EP0364101A2

    公开(公告)日：1990-04-18

    申请号：EP89309231.2

    申请日：1989-09-12

    申请人： HITACHI, LTD.

    发明人： Takagi, Kazumasa ,  Madokoro, Yuuichi ,  Fukazawa, Tokuumi ,  Miyauchi, Katsuki ,  Kawanami, Yoshimi ,  Aida, Toshiyuki ,  Honda, Yukio ,  Futamoto, Masaaki ,  Hiratani, Masahiko

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/729 ,  Y10T29/41

    摘要： To form a weak-link Josephson junction of the type employing a thin film of an oxide superconductor, a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary (45) is formed by a method in which atoms of different species are deposited on a predetermined part (42) of the surface of a substrate (40) the predetermined part of the surface of a substrate (40) is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate (40). Then a superconducting thin film (44) is epitaxially grown on the substrate (43). Alternatively the predetermined part of the superconducting thin film (44) epitaxially grown on a substrate (43) is diffused with atoms of different species hampering a superconducting or the predetermined part of the superconductivity thin film (44) is disturbed, the superconducting thin film (44) is then annealed,
    Also. a superconducting device employing the weak-link junction is disclosed.

    摘要翻译： 为了形成型采用氧化物超导体薄膜的弱连接的约瑟夫逊结，晶粒边界产生的反射人工晶体缺陷被用作弱连接结。 晶界（45）是由在不同种类的哪个原子的方法形成沉积在基片的表面（40）一个基片的表面（40）的预定部分的预定部分（42）是不安 不同晶面取向的，或部分在基片（40）的表面上形成。 然后超导薄膜（44）被外延生长在衬底上（43）。 可替换地，超导薄膜（44）外延生长在一个基板（43）的预定部分与不同物种妨碍超导或超导薄膜的预定部分的原子扩散的（44）被打乱，超导薄膜（ 44）然后退火，从而。 超导器件用人弱连接结游离缺失盘。