发明公开
EP0400821A2 Local interconnect for integrated circuits
失效
Lokalverbindungenfürintegrierte Schaltungen。
- 专利标题： Local interconnect for integrated circuits
- 专利标题（中）： Lokalverbindungenfürintegrierte Schaltungen。
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申请号： EP90304926.0申请日： 1990-05-08
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公开(公告)号： EP0400821A2公开(公告)日： 1990-12-05
- 发明人: Liou, Fu-Tai , Lin, Yih-Shung , Chen, Fusen E.
- 申请人： SGS-THOMSON MICROELECTRONICS, INC.
- 申请人地址： 1310 Electronics Drive Carrollton Texas 75006 US
- 专利权人： SGS-THOMSON MICROELECTRONICS, INC.
- 当前专利权人： SGS-THOMSON MICROELECTRONICS, INC.
- 当前专利权人地址： 1310 Electronics Drive Carrollton Texas 75006 US
- 代理机构： Palmer, Roger
- 优先权： US359860 19890531
- 主分类号： H01L29/62
- IPC分类号： H01L29/62 ; H01L21/60
摘要：
A silicide layer, to improve conductivity, is formed over a first layer of polycrystalline silicon, followed by a second layer of polycrystalline silicon. This structure is then patterned to form gate regions over active areas. A layer of metal silicide is formed over the entire surface of the chip, and patterned to form local interconnect. Etching of the second metal silicide layer is stopped by the second polycrystalline silicon layer, thereby protecting the first metal silicide layer from damage.
公开/授权文献
- EP0400821B1 Local interconnect for integrated circuits 公开/授权日：1994-12-14
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