The invention concerns a semiconductor device comprising a semiconductor chip (15) having a reception circuit for removing a direct-current component of a reception signal by the utilization of a capacitor and a metal film formed on the back side thereof; a first conductive pattern (12) formed on an electrically insulating substrate (11) and set at a common reference voltage for device; and a second conductive pattern (13) formed on said substrate (11) to be electrically insulated from said first conductive pattern (12), fixed to said metal film, and electrically connected to said capacitor. This arrangement results in a high receiving sensitivity and a wide receiving band of the reception circuit, because there is almost no floating capacitance present in the capacitor.