-
公开(公告)号：EP0488160B1
公开(公告)日：1996-02-07
申请号：EP91120174.7
申请日：1991-11-26
CPC分类号： H03F3/604 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H03F2200/294 , H01L2924/00
-
公开(公告)号：EP0541097A1
公开(公告)日：1993-05-12
申请号：EP92118988.2
申请日：1992-11-05
摘要： The protection circuit includes a micro strip line whose length is equal to a fourth of the wavelength of an amplification signal frequency on a board and whose one side is connected to the input side of a low noise amplifier, a diode whose one side is connected to the other side of the micro strip line and whose other side is grounded, and a capacitor which is connected to the point where the micro strip line is connected to the diode and whose impedance is sufficiently small at the amplification signal frequency. In this configuration, the diode has virtually no effect to the amplification signal component because the impedance of the protection circuit for the amplification signal frequency viewed from the contact point becomes sufficiently high. In addition, for static electricity charged on the antenna connected to the input terminal, the diode is virtually connected directly to the input side of the low noise amplifier because the micro strip line is almost zero in resistance.
摘要翻译： 保护电路包括微带线，其长度等于板上放大信号频率的波长的四分之一，并且其一侧连接到低噪声放大器的输入侧，二极管的一侧连接到 微带线的另一侧，另一侧接地，并且连接到微带线连接到二极管并且在放大信号频率下的阻抗足够小的点的电容器。 在这种配置中，由于从接触点观察的放大信号频率的保护电路的阻抗变得足够高，所以二极管对放大信号分量几乎没有影响。 此外，对于连接到输入端子的天线上充电的静电，二极管实际上直接连接到低噪声放大器的输入侧，因为微带线几乎为零电阻。
-
公开(公告)号：EP0451857A3
公开(公告)日：1992-11-25
申请号：EP91105834.5
申请日：1991-04-12
IPC分类号： H01P5/02
摘要： In an input matching circuit adapted to be connected to an input circuit of a low noise amplifier, a matching point of impedance conversion is set to a point (Γ Q ) shifted from a mean value (M[Γopt]) of variations of an optimum signal source impedance (Γopt) of the low noise amplifier so that a change of noise index is gentle even if the optimum signal source impedance of the low noise amplifier includes variations.
-
公开(公告)号：EP0454054A3
公开(公告)日：1992-03-18
申请号：EP91106511.8
申请日：1991-04-23
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： The invention relates to a lamp annealing apparatus and method for a semiconductor wafer. In a heating step of an annealing process, cooling gas is blown towards a periphery of the semiconductor wafer (2), and in a steady state step and a cooling step, cooling gas is blown toward a center of the semiconductor wafer (2). In this manner, a temperature difference between the center and the periphery of the semiconductor wafer (2) is eliminated throughout the annealing process.
-
公开(公告)号：EP0438047A1
公开(公告)日：1991-07-24
申请号：EP91100005.7
申请日：1991-01-02
IPC分类号： H01L29/41 , H01L29/812
CPC分类号： H03D7/125 , H01L29/42316 , H01L29/8124
摘要： In a dual gate FET of this invention, the number of points (A, B, C) for supplying signals to a first gate electrode (20) and the number of points (A', B', C') for supplying signals to a second gate electrode (30) are set to be optimal values so that a noise index is minimized. A difference in electrical length between each signal supply point of each of the first and second gate electrodes (20, 30) and the corresponding gate input terminals (22, 32) has a negligible magnitude with respect to a quarter wavelength of an input signal applied to the corresponding gate input terminal (22, 32). The dual gate FET has a low-noise arrangement, and a microwave can be applied to either one of the first and second gate electrodes (20, 30), thereby obtaining, e. g., a low-noise mixer. In this case, a separator required upon use of a single gate FET can be omitted, thereby easily arranging a monolithic IC.
摘要翻译： 在本发明的双栅极FET中，用于向第一栅电极（20）提供信号的点数（A，B，C）和用于提供信号的点数（A'，B'，C'） 将第二栅电极（30）设定为最佳值，使得噪声指数最小化。 第一和第二栅极电极（20,30）和对应的栅极输入端子（22,32）中的每个信号提供点之间的电长度差异相对于施加的输入信号的四分之一波长具有可忽略的幅度 到相应的门输入端（22,32）。 双栅极FET具有低噪声布置，并且可以将微波施加到第一和第二栅极电极（20,30）中的任一个，从而获得，例如， 例如，低噪声混频器。 在这种情况下，可以省略使用单个栅极FET所需的隔板，从而容易地布置单片IC。
-
公开(公告)号：EP0415318B1
公开(公告)日：1996-03-13
申请号：EP90116385.7
申请日：1990-08-27
CPC分类号： H01L23/642 , H01L24/48 , H01L24/49 , H01L2224/48233 , H01L2224/48237 , H01L2224/49171 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01079 , H01L2924/12043 , H01L2924/14 , H01L2924/19041 , Y10S257/916 , H01L2224/45099 , H01L2224/05599 , H01L2924/00
-
公开(公告)号：EP0406865A3
公开(公告)日：1993-03-03
申请号：EP90112862.9
申请日：1990-07-05
CPC分类号： H04N7/22
摘要： In analog communication, a transmission signal must be demodulated with good linearity. However, linearity of a reception signal is often impaired due to a too large input signal or variations during the manufacture of elements or a fluctuation in power supply voltage. According to this invention, a plurality of source-follower circuits constituting a demodulation circuit are formed on a single semiconductor substrate, a resistor (R12) having a high resistance is connected between the gate and the source of a first FET (Q11), and another resistor (R13) is connected to the source. The gate of each of the second and subsequent FETs (Q12) is connected to the source of the immediately preceding FET (Q11), and its source is connected to the gate of the next FET. A product of a gate width of each of the second and subsequent FETs (Q12) and a resistance of the resistor (R14) connected to the source is set to be equal to that of the first FET (Q11). An operation gate voltage of each FET is set to fall within a range wherein the relationship between the operation gate voltage and a drain current linearly changes. Since the FETs are formed on the single substrate, rates of variations during the manufacture of the elements and a fluctuation in power supply voltage become equal to each other. Therefore, according to this invention, a reception signal can be demodulated with excellent linearity.
-
公开(公告)号：EP0488160A1
公开(公告)日：1992-06-03
申请号：EP91120174.7
申请日：1991-11-26
CPC分类号： H03F3/604 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H03F2200/294 , H01L2924/00
摘要： A multistage amplifier for amplifying an input signal so as to output an amplified signal. The multistage amplifier is comprised of a plurality of transistors that are monolithically formed around a central VIA hole. Predetermined electrodes of the respective transistors are electrically connected to each other in the area immediately surrounding the central VIA hole and are connected to the VIA hole itself. This allows for a reduction of the number of VIA holes used over conventional methods. The distance between the central VIA hole and the predetermined electrodes of each of the transistors is minimal, as is the wiring pattern of each of the electrodes. No scattering is caused by the characteristics of the transistors, as they are monolithically formed in the same manufacturing process.
摘要翻译： 一种用于放大输入信号以输出放大信号的多级放大器。 多级放大器由围绕中央VIA孔单片形成的多个晶体管组成。 各个晶体管的预定电极在紧邻中心VIA孔的区域中彼此电连接并连接到VIA孔本身。 这允许减少与常规方法相比使用的VIA孔的数量。 每个晶体管的中心VIA孔和预定电极之间的距离是最小的，每个电极的布线图案也是这样。 晶体管的特性不会产生散射，因为它们在相同的制造工艺中被整体地形成。
-
公开(公告)号：EP0451857A2
公开(公告)日：1991-10-16
申请号：EP91105834.5
申请日：1991-04-12
IPC分类号： H01P5/02
摘要： In an input matching circuit adapted to be connected to an input circuit of a low noise amplifier, a matching point of impedance conversion is set to a point (Γ Q ) shifted from a mean value (M[Γopt]) of variations of an optimum signal source impedance (Γopt) of the low noise amplifier so that a change of noise index is gentle even if the optimum signal source impedance of the low noise amplifier includes variations.
摘要翻译： 在适于连接到低噪声放大器的输入电路的输入匹配电路中，将阻抗转换的匹配点设置为从低噪声放大器的最佳信号源阻抗的变化的平均值偏移的点，使得 即使低噪声放大器的最佳信号源阻抗包括变化，噪声指数的变化也是平缓的。
-
公开(公告)号：EP0422673A2
公开(公告)日：1991-04-17
申请号：EP90119610.5
申请日：1990-10-12
IPC分类号： H04B10/14
CPC分类号： H04B10/6911
摘要： A case where a high bias voltage is required for a photo-element (3) of a photo-receiver, a high voltage is applied to an amplifier (4) which amplifies a photo-current created by the photo-element, when a power supply is turned on. In a prior art photo-receiver, the amplifier may be broken due to this high voltage. In the present invention, the photo-receiver is provided with a protection circuit (5) comprising a diode (11) connected between a power supply circuit (6) and a photo-element (3), a resistor (12) connected in parallel with the diode (11), and a first capacitor (13) having one end thereof connected to an anode of the diode and the other end thereof connected to a reference potential. Constants of the circuit components are set such that a time constant of the supply of the power to the amplifier (4) is smaller than a rising time constant of the supply of the power to the photo-element (3) and a larger than a falling time constant of the supply of the power to the photo-element (3). Accordingly, the supply of the power to the photo-element is started after the potential at the input terminal of the amplifier has been established and the potential at the input terminal of the amplifier floats after the supply of the power to the photo-element has been fully extinguished. As a result, the amplifier is not broken at the time of power-on and a surge voltage is not applied to the input terminal of the amplifier at the time of power-off.
摘要翻译： 对于光接收器的光电元件（3）需要高偏置电压的情况，高电压被施加到放大器（4），放大器（4）放大由光电元件产生的光电流，当功率 电源打开。 在现有技术的光接收器中，由于该高电压，放大器可能会断开。 在本发明中，光接收器设置有保护电路（5），该保护电路包括连接在电源电路（6）和光电元件（3）之间的二极管（11），并联的电阻器 和二极管（11），以及第一电容器（13），其一端连接到二极管的阳极，另一端连接到参考电位。 电路部件的常数被设定为使得向放大器（4）供电的时间常数小于向光电元件（3）供电的上升时间常数，并且大于 向光电元件（3）供电的下降时间常数。 因此，在已经建立了放大器的输入端上的电位并且在向光电元件供电之后放大器的输入端子处的电位漂移之后开始向光电元件供电， 已经完全熄灭。 因此，在断电时放大器不会断开，并且在断电时不向放大器的输入端施加浪涌电压。
-
-
-
-
-
-
-
-
-
搜索结果
29 条记录 (耗时 0.012 秒)
