发明公开
- 专利标题： METHOD OF FABRICATING SEMICONDUCTOR DEVICES
- 专利标题（中）： 制造半导体器件的方法
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申请号： EP90907412申请日： 1990-05-09
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公开(公告)号： EP0428738A4公开(公告)日： 1991-07-24
- 发明人: OKITA, YOSHIHISA OKI ELECTRIC INDUSTRY CO., LTD.
- 申请人： OKI ELECTRIC INDUSTRY COMPANY, LIMITED
- 申请人地址： 7-12, TORANOMON 1-CHOME MINATO-KU; TOKYO 105
- 专利权人： OKI ELECTRIC INDUSTRY COMPANY, LIMITED
- 当前专利权人： OKI ELECTRIC INDUSTRY COMPANY, LIMITED
- 当前专利权人地址： 7-12, TORANOMON 1-CHOME MINATO-KU; TOKYO 105
- 优先权： JP11518689 1989-05-10; JP11518789 1989-05-10
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/331 ; H01L21/60 ; H01L21/8228 ; H01L27/082 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/732 ; H01L29/78 ; H01L29/73 ; H01L21/335 ; H01L27/092
摘要：
Ions are selectively implanted into polycrystalline silicon for electrodes by utilizing low-temperature accelerated oxidation phenomenon in polycrystalline silicon having a high impurity concentration and acceleration energy dependency of impurity projection ranges of ion implantation. Therefore, there is no need of forming a mask resist pattern by photoengraving for every step of introducing impurities. Further, the base (source, drain) electrode is formed of polycrystalline silicon isolated by a selective oxidation method, the selectively oxidized film pertaining to the emitter (gate) region is removed, and a side wall spacer is formed on the inside of the emitter (gate) region, thereby making it possible to form the emitter (gate) of a reduced size.
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