发明公开
EP0456372A1 Perimeter wafer seal with gas exclusion
失效
PeripherieabdichtungfürHalbleiterplättchendurch Gasinjektion。
- 专利标题： Perimeter wafer seal with gas exclusion
- 专利标题（中）： PeripherieabdichtungfürHalbleiterplättchendurch Gasinjektion。
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申请号： EP91303628.1申请日： 1991-04-23
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公开(公告)号： EP0456372A1公开(公告)日： 1991-11-13
- 发明人: Schmitz, John , Chow, Raymond L. , Scholz, Frederick J. , Turner, Norman L. , Uher, Frank Otto
- 申请人： GENUS, INC.
- 申请人地址： 515 Ellis Street Mt. View California 94043 US
- 专利权人： GENUS, INC.
- 当前专利权人： GENUS, INC.
- 当前专利权人地址： 515 Ellis Street Mt. View California 94043 US
- 代理机构： Wright, Peter David John (GB)
- 优先权： US512809 19900423
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Apparatus and methods are disclosed for preventing edge and backside coating on wafers in CVD processing. A wafer seal ring with a proximity seal to the CVD chuck is pressed over the wafer contacting the wafer around the outer periphery and urging the wafer against the chuck. The seal ring forms an annulus volume around the wafer and a proximity seal with a surface of the chuck. An inert gas is conducted through the chuck directly into the annulus volume, and flows from the annulus through the proximity seal, excluding coating gas from migrating into the area of the edge and backside of the wafer.
公开/授权文献
- EP0456372B1 Perimeter wafer seal with gas exclusion 公开/授权日：1995-03-22
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