摘要:
Apparatus and methods are disclosed for preventing edge and backside coating on wafers in CVD processing. A wafer seal ring with a proximity seal to the CVD chuck is pressed over the wafer contacting the wafer around the outer periphery and urging the wafer against the chuck. The seal ring forms an annulus volume around the wafer and a proximity seal with a surface of the chuck. An inert gas is conducted through the chuck directly into the annulus volume, and flows from the annulus through the proximity seal, excluding coating gas from migrating into the area of the edge and backside of the wafer.