Perimeter wafer seal with gas exclusion
    2.
    发明公开
    Perimeter wafer seal with gas exclusion 失效
    PeripherieabdichtungfürHalbleiterplättchendurch Gasinjektion。

    公开(公告)号:EP0456372A1

    公开(公告)日:1991-11-13

    申请号:EP91303628.1

    申请日:1991-04-23

    申请人: GENUS, INC.

    IPC分类号: H01L21/00

    摘要: Apparatus and methods are disclosed for preventing edge and backside coating on wafers in CVD processing. A wafer seal ring with a proximity seal to the CVD chuck is pressed over the wafer contacting the wafer around the outer periphery and urging the wafer against the chuck. The seal ring forms an annulus volume around the wafer and a proximity seal with a surface of the chuck. An inert gas is conducted through the chuck directly into the annulus volume, and flows from the annulus through the proximity seal, excluding coating gas from migrating into the area of the edge and backside of the wafer.

    摘要翻译: 公开了用于防止CVD处理中的晶片上的边缘和背面涂覆的装置和方法。 具有与CVD卡盘的接近密封的晶片密封环被压在与外周边接触晶片的晶片上,并将晶片推向卡盘。 密封环在晶片周围形成环状体积,并且与卡盘的表面形成邻近密封。 惰性气体通过卡盘直接进入环形空间,并且从环形空间通过邻近密封件流出,不包括涂覆气体迁移到晶片的边缘和背面的区域。