发明公开
EP0460440A2 Method of forming a localized buried isolation structure
失效
用于超高能量注入和使用这种方法的用于局部埋入注入和隔离结构Selbstaligniertes标记方法。
- 专利标题： Method of forming a localized buried isolation structure
- 专利标题（中）： 用于超高能量注入和使用这种方法的用于局部埋入注入和隔离结构Selbstaligniertes标记方法。
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申请号： EP91108017.4申请日： 1991-05-17
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公开(公告)号： EP0460440A2公开(公告)日： 1991-12-11
- 发明人: Aronowitz, Sheldon , Hart, Courtney L. , Buynoski, Matthew
- 申请人： NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： 2900 Semiconductor Drive P.O. Box 58090 Santa Clara California 95051-8090 US
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 2900 Semiconductor Drive P.O. Box 58090 Santa Clara California 95051-8090 US
- 代理机构： Sparing Röhl Henseler Patentanwälte
- 优先权： US531509 19900531
- 主分类号： H01L21/266
- IPC分类号： H01L21/266 ; H01L21/76 ; H01L21/316
摘要：
A self-aligned masking process for use with ultra-high energy implants (implant energies equal to or greater than 1 MeV) is provided. The process can be applied to an arbitrary range of implant energies. Consequently, high doses of dopant may be implanted to give high concentrations that are deeply buried. This can be coupled with the fact that amorphization of the substrate lattice is relatively localized to the region where the ultra-high energy implant has peaked to yield a procedure to form buried, localized isolation structures.
公开/授权文献
- EP0460440B1 Method of forming a localized buried isolation structure 公开/授权日：1997-07-30
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